Method of manufacturing a crown shape capacitor in semiconductor memory using a single step etching

Invention Grant

US5804489A Method of manufacturing a crown shape capacitor in semiconductor memory using a single step etching 失效

Title translation: 使用单步蚀刻在半导体存储器中制造冠状电容器的方法

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Patent Title: Method of manufacturing a crown shape capacitor in semiconductor memory using a single step etching
Patent Title (中): 使用单步蚀刻在半导体存储器中制造冠状电容器的方法
Application No.: US679196

Application Date: 1996-07-12
Publication No.: US5804489A

Publication Date: 1998-09-08
Inventor: Fu-Liang Yang , Erik S. Jeng , Yu-Chun Ho , Bin Liu , Chao-Ming Koh
Applicant: Fu-Liang Yang , Erik S. Jeng , Yu-Chun Ho , Bin Liu , Chao-Ming Koh
Applicant Address: TWX Hsinchu
Assignee: Vanguard International Semiconductor Corporation
Current Assignee: Vanguard International Semiconductor Corporation
Current Assignee Address: TWX Hsinchu
Main IPC: H01L21/8242
IPC: H01L21/8242 ; H01L27/108

Method of manufacturing a crown shape capacitor in semiconductor memory
using a single step etching

Abstract:

The present invention is a method of manufacturing crown shape capacitors in the semiconducter memories. Using a single step etching to farbricate the capacitor in a DRAM cell. The method can form side wall polymers and etching byproductions on the surface of the first polysilicon, using the side wall polymers and the etching byproductions as a mask to form the crown shape capacitors with pillars. Moreover, this present invention can form the crown shape structure and pillars in the same step, the crown shape structure and the pillars increase the surface area of the capacitor. Therefore the present invention will increase the performance of the capacitor.

Abstract(Chinese):

本发明是在半导体存储器中制造冠状电容器的方法。使用单步蚀刻来超越DRAM单元中的电容器。该方法可以使用侧壁聚合物和蚀刻副产物作为掩模形成侧壁聚合物并在第一多晶硅的表面上蚀刻副产物，以形成具有支柱的冠状电容器。此外，本发明可以在相同的步骤中形成冠状结构和柱，冠状结构和柱增加电容器的表面积。因此，本发明将增加电容器的性能。

Public/Granted literature

US5132519A Electric heater Public/Granted day:1992-07-21

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）