发明授权
- 专利标题： Method and device for forming an excited gaseous atmosphere lacking electrically charged species used for treating nonmetallic substrates
- 专利标题（中）： 用于形成不用于处理非金属基底的带电物质的激发气氛的方法和装置
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申请号： US640802申请日： 1996-06-05
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公开(公告)号： US5807614A公开(公告)日： 1998-09-15
- 发明人: Thierry Sindzingre , Stephane Rabia , Fran.cedilla.ois Coeuret
- 申请人： Thierry Sindzingre , Stephane Rabia , Fran.cedilla.ois Coeuret
- 申请人地址： FRX Paris
- 专利权人： L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
- 当前专利权人： L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
- 当前专利权人地址： FRX Paris
- 优先权： FRX9315111 19931215
- 主分类号： C23C16/42
- IPC分类号： C23C16/42 ; C23C16/452 ; C23C16/50 ; C23C16/509 ; C23C16/22
摘要：
A method of forming a gaseous treatment atmosphere capable of depositing a silicon-containing film on a nonmetallic substrate comprising the steps of: converting an initial treatment gas mixture into a primary treatment gas mixture in an apparatus for forming excited or unstable gas species, the primary treatment gas mixture comprising excited or unstable gaseous species substantially devoid of electrically charged species, combining the primary treatment gas mixture with an adjacent treatment gas mixture which comprises at least one gaseous silicon precursor which has not passed through the apparatus, to form the gaseous treatment atmosphere.
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