发明授权
- 专利标题： Semiconductor PH sensor and circuit and method of making same
- 专利标题（中）： 半导体PH传感器及电路及其制作方法
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申请号： US752580申请日： 1996-11-21
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公开(公告)号： US5814280A公开(公告)日： 1998-09-29
- 发明人: Katsuhiko Tomita , Tsuyoshi Nakanishi , Syuji Takamatsu , Satoshi Nomura , Hiroki Tanabe
- 申请人： Katsuhiko Tomita , Tsuyoshi Nakanishi , Syuji Takamatsu , Satoshi Nomura , Hiroki Tanabe
- 申请人地址： JPX Kyoto
- 专利权人： Horiba, Ltd
- 当前专利权人： Horiba, Ltd
- 当前专利权人地址： JPX Kyoto
- 优先权： JPX7-329836 19951124; JPX8-289370 19961011
- 主分类号： G01N27/414
- IPC分类号： G01N27/414 ; G01N21/00
摘要：
A pH sensor having an ISFET is provided on a crystalline substrate of silicon with a thin film of aluminum oxide formed to have epitaxial growth with an overlaying thin film of silicon epitaxial grown on the aluminum oxide layer. A source element and a drain element are provided on the silicon film, and a pH responsive film layer is connected to the source and drain. The pH sensor can be accompanied with appropriate circuitry also integrally formed on the same epitaxial SOI substrate.