发明授权
- 专利标题： Method of fabricating self-align contact window with silicon nitride side wall
- 专利标题（中）： 用氮化硅侧壁制作自对准接触窗的方法
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申请号： US647410申请日： 1996-05-09
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公开(公告)号： US5814553A公开(公告)日： 1998-09-29
- 发明人: Andy Chuang , Tzong-Shien Wu
- 申请人： Andy Chuang , Tzong-Shien Wu
- 申请人地址： TWX Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TWX Hsinchu
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/60 ; H01L21/3205
摘要：
The process of the present invention has numerous advantages over the prior art. The silicon nitride side-wall spacers permit a small contact hole thus miniaturizing the cell beyond lithographic limits. The side-wall spacers composed of silicon nitride and silicon dioxide avoid to expose the polysilicon when the contact window is formed by etching step. Moreover, the highly selective etching process improve the accuracy of the contact window.
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