发明授权
- 专利标题: Process of diamond growth from C.sub.70
- 专利标题(中): C70钻石生长过程
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申请号: US828148申请日: 1997-03-24
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公开(公告)号: US5824368A公开(公告)日: 1998-10-20
- 发明人: Martin Moskovits , Kejian Fu
- 申请人: Martin Moskovits , Kejian Fu
- 专利权人: Moskovits; Martin,Fu; Kejian
- 当前专利权人: Moskovits; Martin,Fu; Kejian
- 主分类号: C30B29/04
- IPC分类号: C30B29/04 ; C23C16/27 ; C30B23/00 ; C30B25/00 ; C23C16/26 ; C01B31/06
摘要:
A method of growing single crystal diamonds in excess of 10 .mu.m in diameter from industrial diamond "seeds" having mean diameters of approximately 1.5 .mu.m is disclosed. The diamonds are grown by exposing the seed diamonds to C.sub.70 in the presence of elemental reducing agents such as phosphorus or selenium in evacuated cells at moderate temperatures and pressures. In another aspect the invention diamonds are grown by exposing diamond seed particles to vapour phase C.sub.70 in the presence of a gas phase metal carbonyl, such as F.sub.5 e(CO) in a temperature range of 400.degree. C. to 700.degree. C. to cause at least some of the diamond seed particles to grow.
公开/授权文献
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