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US5830376A Topographical selective patterns 失效
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Topographical selective patterns
摘要:
A maskless process generates a patterned coating on a polymeric substrate, wherein the pattern is at least partially defined by the substrate topography. The process uses a high intensity/high fluence energy source to strike a coated substrate, thus selectively removing a portion of the coating. The amount and area of the coating removed is dependent on the substrate topography and the applied energy, and this forms a pattern of residual coating material on the substrate.
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