- 专利标题： Semiconductor device having an element isolating oxide film and method of manufacturing the same
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申请号： US601662申请日： 1996-02-14
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公开(公告)号： US5831323A公开(公告)日： 1998-11-03
- 发明人: Kaoru Motonami , Shigeru Shiratake , Hiroshi Matsuo , Yuichi Yokoyama , Kenji Morisawa , Ritsuko Gotoda , Takaaki Murakami , Satoshi Hamamoto , Kenji Yasumura , Yasuyoshi Itoh
- 申请人： Kaoru Motonami , Shigeru Shiratake , Hiroshi Matsuo , Yuichi Yokoyama , Kenji Morisawa , Ritsuko Gotoda , Takaaki Murakami , Satoshi Hamamoto , Kenji Yasumura , Yasuyoshi Itoh
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-117060 19950516
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/76 ; H01L21/762 ; H01L21/8234 ; H01L29/00
摘要：
There are provided a semiconductor device, which includes an element isolating oxide film having a good upper flatness, and a method of manufacturing the same. Assuming that t.sub.G represents a thickness of a gate electrode layer 6, a height t.sub.U to an upper surface of a thickest portion of element isolating oxide film 4 from an upper surface of a gate insulating film 5 and an acute angle .theta.i defined between the upper surfaces of element isolating oxide film 4 and gate insulating film are set within ranges expressed by the formula of {.theta.i, t.sub.U .linevert split.0.ltoreq..theta.i.ltoreq.56.6.degree., 0.ltoreq.t.sub.U .ltoreq.0.82t.sub.G }. Thereby, an unetched portion does not remain at an etching step for patterning the gate electrode layer to be formed later. This prevents short-circuit of the gate electrode. Since the element isolating oxide film has the improved flatness, a quantity of overetching in an active region can be reduced at a step of patterning the gate electrode. This prevents shaving of the gate insulating film and the underlying substrate surface.
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