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19 条记录 (耗时 0.019 秒)

    PHOTOVOLTAIC DEVICE, MANUFACTURING METHOD THEREOF, AND PHOTOVOLTAIC MODULE
    1.
    发明申请
    PHOTOVOLTAIC DEVICE, MANUFACTURING METHOD THEREOF, AND PHOTOVOLTAIC MODULE 有权
    光伏器件及其制造方法和光电模块

    公开(公告)号：US20130291924A1

    公开(公告)日：2013-11-07

    申请号：US13979272

    申请日：2012-03-02

    申请人： Satoshi Hamamoto

    发明人： Satoshi Hamamoto

    IPC分类号： H01L31/0352

    CPC分类号： H01L31/03529 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A photovoltaic device includes a silicon substrate of a first conduction type that includes an impurity diffusion layer on one surface side; a light-receiving-surface side electrode that includes a plurality of grid electrodes electrically connected to the impurity diffusion layer; and a back-surface side electrode formed on the other surface side of the silicon substrate wherein the impurity diffusion layer includes a first impurity diffusion layer and a second impurity diffusion layer, and wherein the first impurity diffusion layer is formed so that a direction perpendicular to a longitudinal direction of the grid electrodes is a longitudinal direction thereof, and so that an area ratio of the first impurity diffusion layer to a band region is equal to or lower than 50%.

    摘要翻译： 光电器件包括在一个表面侧包括杂质扩散层的第一导电类型的硅衬底; 光接收面侧电极，其包括电连接到所述杂质扩散层的多个栅电极; 以及形成在所述硅基板的另一个表面侧的背面侧电极，其中所述杂质扩散层包括第一杂质扩散层和第二杂质扩散层，并且其中所述第一杂质扩散层形成为使得垂直于 栅电极的长度方向为长度方向，第一杂质扩散层与带区的面积比为50％以下。

    PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    光伏器件及其制造方法

    公开(公告)号：US20130139881A1

    公开(公告)日：2013-06-06

    申请号：US13814075

    申请日：2010-10-20

    申请人： Satoshi Hamamoto

    发明人： Satoshi Hamamoto

    IPC分类号： H01L31/0232 ,  H01L31/18

    CPC分类号： H01L31/02327 ,  H01L31/022425 ,  H01L31/056 ,  H01L31/068 ,  Y02E10/52 ,  Y02E10/547

    摘要： A In a photovoltaic device, a second electrode includes an aluminum-based electrode that is made of a material including aluminum and is electrically connected to an other surface side of a substrate by being embedded in at least openings on the other surface side of the substrate, and a silver-based electrode that is made of a material including silver, that is provided in a region between the openings on the other surface side of the substrate in a state where the silver-based electrode eats into a back surface insulating film such that the silver-based electrode is insulated from the other surface side of the substrate by the back surface insulating film, and that is electrically connected to the aluminum-based electrode via the back surface reflective film.

    摘要翻译： A在光电器件中，第二电极包括由包括铝的材料制成的铝基电极，并且通过嵌入基板的另一表面侧上的至少开口而电连接到基板的另一表面侧 以及银基电极，其由包括银的材料制成，其设置在银基电极进入背面绝缘膜的状态下的基板的另一表面侧上的开口之间的区域中， 银基电极通过背面绝缘膜与基板的另一表面侧绝缘，并且经由背面反射膜电连接到铝基电极。

    PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    光伏器件及其制造方法

    公开(公告)号：US20130133741A1

    公开(公告)日：2013-05-30

    申请号：US13813865

    申请日：2010-10-05

    申请人： Satoshi Hamamoto

    发明人： Satoshi Hamamoto

    IPC分类号： H01L31/0232 ,  H01L31/18

    CPC分类号： H01L31/02327 ,  H01L31/022425 ,  H01L31/056 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    摘要： In a photovoltaic device, a second electrode includes an Al-based electrode that is connected to an other surface side of a substrate by being embedded in openings on the other surface side of the substrate, and an Ag-based electrode that is provided in a region between the openings on the other surface side of the substrate and is electrically connected to the other surface side of the substrate by at least a part thereof penetrating a back surface insulating film, and a sum of an area of the Ag-based electrode in a plane of the substrate and an area of a peripheral region, which is obtained by extending a pattern of the Ag-based electrode by a diffusion length of a carrier outward in a plane of the substrate, is 10% or less of an area on the other surface side of the substrate.

    摘要翻译： 在光电器件中，第二电极包括Al基电极，其通过嵌入在基板的另一表面侧上的开口中而连接到基板的另一表面侧，并且Ag基电极设置在基板 在基板的另一表面侧的开口之间的区域中，并且通过至少一部分穿透背面绝缘膜将基板的另一表面侧电连接，并且将Ag基电极的面积之和 基板的平面和周边区域的面积是通过在基板的平面内向外延伸载体的Ag基电极的图案而向外延伸的面积的10％以下的面积 衬底的另一表面侧。

    Hydraulic device
    6.
    发明授权
    Hydraulic device 失效
    液压装置

    公开(公告)号：US5937645A

    公开(公告)日：1999-08-17

    申请号：US772853

    申请日：1996-12-24

    申请人： Satoshi Hamamoto

    发明人： Satoshi Hamamoto

    IPC分类号： F15B11/16 ,  F15B13/04 ,  F15B13/06

    CPC分类号： F15B13/0417 ,  F15B11/165 ,  F04B2205/06 ,  F15B2211/20553 ,  F15B2211/20592 ,  F15B2211/253 ,  F15B2211/30505 ,  F15B2211/30535 ,  F15B2211/30555 ,  F15B2211/3111 ,  F15B2211/3144 ,  F15B2211/31576 ,  F15B2211/324 ,  F15B2211/351 ,  F15B2211/6054 ,  F15B2211/6055 ,  F15B2211/6309 ,  F15B2211/6313 ,  F15B2211/7053 ,  F15B2211/7058 ,  F15B2211/71 ,  F15B2211/7135

    摘要： A hydraulic device comprises a variable displacement pump, a plurality of hydraulic actuators, a plurality of directional valves capable of controlling the delivery oil flowing into each of the actuators, a plurality of pressure compensation valves which compensate the pressures of respective directional valves, and a pump flow control valve capable of controlling the pump delivery. Each of the pressure compensation valves decreases its output flow to a particular actuator according to an increase in the loaded pressure of the particular actuator. With this arrangement, if the loaded pressure of the particular actuator suddenly changes, the loaded pressure attenuates to ensure stable operation of the hydraulic device. Further, the stable operation is fee of hunting for both low-load actuators and high-load actuators, regardless of an independent operation or a compound operation.

    摘要翻译： 液压装置包括可变排量泵，多个液压致动器，能够控制流入每个致动器的输送油的多个方向阀，补偿各个换向阀的压力的多个压力补偿阀，以及 泵流量控制阀能够控制泵输送。 根据特定致动器的负载压力的增加，每个压力补偿阀将其输出流量减小到特定的致动器。 通过这种布置，如果特定致动器的负载压力突然变化，则负载压力衰减以确保液压装置的稳定运行。 此外，无论独立操作还是复合操作，稳定操作都是低负载致动器和高负载致动器的打猎费。

    Method of producing a semiconductor structure including a recrystallized film
    8.
    发明授权
    Method of producing a semiconductor structure including a recrystallized film 失效
    制造包括再结晶膜的半导体结构的方法

    公开(公告)号：US5467731A

    公开(公告)日：1995-11-21

    申请号：US322375

    申请日：1994-10-13

    申请人： Satoshi Arimoto ,  Norio Hayafuji ,  Mikio Deguchi ,  Satoshi Hamamoto

    发明人： Satoshi Arimoto ,  Norio Hayafuji ,  Mikio Deguchi ,  Satoshi Hamamoto

    IPC分类号： H01L21/208 ,  H01L21/20 ,  C30B13/20

    CPC分类号： H01L21/2022

    摘要： A method for producing a semiconductor structure including a semiconductor film formed on a semiconductor substrate body via an insulating film includes: laminating a first insulating film, a first semiconductor film, and a second insulating film on the semiconductor substrate successively; forming stripe-shaped second semiconductor films of predetermined width on the second insulating film arranged periodically at a predetermined interval and covering these second semiconductor films with a third insulating film; performing zone melting recrystallization of the first semiconductor film from one end of the substrate to the opposite end along the stripe direction of the stripe-shaped second semiconductor film; etching the third insulating film and portions of the second insulating film not sandwiched by the first and second semiconductor films; oxidizing portions of the second semiconductor film and the first semiconductor film exposed in the etching step and etching and removing the second insulating film remaining after the previous etching. Thus, a semiconductor substrate including a recrystallized semiconductor film having removed sub-grain-boundaries generated during the zone melting recrystallization, is obtained by fewer process steps than in the prior art.

    摘要翻译： 一种用于制造半导体结构的方法，该半导体结构包括通过绝缘膜形成在半导体衬底本体上的半导体膜，包括：依次在半导体衬底上层叠第一绝缘膜，第一半导体膜和第二绝缘膜; 在预定间隔周期性地布置的第二绝缘膜上形成预定宽度的条状第二半导体膜，并用第三绝缘膜覆盖这些第二半导体膜; 从所述基板的一端到所述条状的第二半导体膜的条带方向的相反端进行区域熔融再结晶的第一半导体膜; 蚀刻第三绝缘膜和未被第一和第二半导体膜夹持的第二绝缘膜的部分; 在蚀刻步骤中暴露的第二半导体膜和第一半导体膜的氧化部分，并蚀刻除去在先前蚀刻之后残留的第二绝缘膜。 因此，通过比现有技术更少的工艺步骤获得包括在区域熔融再结晶期间产生的去除亚晶界的再结晶半导体膜的半导体衬底。

    Manufacturing method of photovoltaic device and manufacturing apparatus for photovoltaic device
    10.
    发明授权
    Manufacturing method of photovoltaic device and manufacturing apparatus for photovoltaic device 有权
    光伏器件制造方法及光伏器件制造装置

    公开(公告)号：US09246043B2

    公开(公告)日：2016-01-26

    申请号：US14364855

    申请日：2012-02-01

    申请人： Satoshi Hamamoto

    发明人： Satoshi Hamamoto

    IPC分类号： H01L21/306 ,  H01L31/18 ,  H01L21/223 ,  H01L31/068 ,  H01L21/225 ,  H01L21/67

    CPC分类号： H01L31/18 ,  H01L21/223 ,  H01L21/225 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/67063 ,  H01L21/6708 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A manufacturing method includes a step of forming an impurity diffusion layer by diffusing an impurity element in a surface of a silicon-based substrate; and an etching step of removing the impurity diffusion layer in at least a portion of a first-surface side of the silicon-based substrate, wherein the etching step includes an etching-fluid supplying step of, on the first-surface side, supplying an etching fluid that flows to an outer edge portion of the silicon-based substrate from a supply position, and an air supplying step of, on a second-surface side, which is opposite to the first-surface side, of the silicon-based substrate, supplying air in a same direction as the etching fluid in accordance with supply of the etching fluid at the etching-fluid supplying step.

    摘要翻译： 一种制造方法包括通过在硅基基板的表面中扩散杂质元素来形成杂质扩散层的步骤; 以及蚀刻步骤，在所述硅基基板的第一表面侧的至少一部分中除去所述杂质扩散层，其中所述蚀刻步骤包括蚀刻流体供给步骤，所述蚀刻流体供应步骤在所述第一表面侧上， 从供给位置流入硅基基板的外缘部的蚀刻流体，以及与第一表面侧相反的硅基基板的第二表面侧的空气供给工序 根据蚀刻流体供给步骤中的蚀刻流体的供给，沿与蚀刻流体相同的方向供给空气。