发明授权
US5834106A Ceramic substrate and producing process thereof, and a suction carrier
for wafers using a ceramic wafer-chucking substrate
失效
陶瓷基板及其制造方法以及使用陶瓷晶片夹持基板的晶片的吸引载体
- 专利标题： Ceramic substrate and producing process thereof, and a suction carrier for wafers using a ceramic wafer-chucking substrate
- 专利标题（中）： 陶瓷基板及其制造方法以及使用陶瓷晶片夹持基板的晶片的吸引载体
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申请号： US343464申请日： 1994-11-28
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公开(公告)号： US5834106A公开(公告)日： 1998-11-10
- 发明人: Hideto Kamiaka , Yukio Kishi
- 申请人： Hideto Kamiaka , Yukio Kishi
- 申请人地址： JPX Tokyo
- 专利权人： Nihon Cement Co., Ltd.
- 当前专利权人： Nihon Cement Co., Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-158582 19920526; JPX4-158666 19920526; JPX4-158697 19920526; JPX4-158774 19920526
- 主分类号： C04B35/111
- IPC分类号： C04B35/111 ; C04B35/46 ; C04B35/645 ; G11B5/73 ; G11B5/84 ; H01G4/06 ; H01G4/08 ; H01L21/48 ; H01L23/15 ; H05K1/03 ; B32B3/26 ; B21F41/00 ; C04B35/48
摘要：
A ceramic substrate for a hard disc, a thin film chip capacitor, and hybrid ICs, and a suction carrier for a substrate is constituted by using a titanium oxide or aluminum oxide substrate having an extremely small number of pores having diameters of 3 .mu.m or more on the substrate surface. The substrate is produced by baking highly purified titanium oxide fine powder or highly purified aluminum oxide fine powder in the air, an inert atmosphere or a reducing atmosphere (at 1,100.degree. C. to 1,300.degree. C. for the former and at 1,200.degree. to 1,400.degree. C. for the latter) and HIP treating the baked material.
公开/授权文献
- US5033655A Dispensing package for fluid products and the like 公开/授权日：1991-07-23
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