发明授权
- 专利标题: Synchronous dram having a plurality of latency modes
- 专利标题(中): 具有多个等待时间模式的同步电话
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申请号: US822148申请日: 1997-03-17
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公开(公告)号: US5835956A公开(公告)日: 1998-11-10
- 发明人: Churoo Park , Hyun-Soon Jang , Chull-Soo Kim , Myung-Ho Kim , Seung-Hun Lee , Si-Yeol Lee , Ho-Cheol Lee , Tae-Jin Kim , Yun-Ho Choi
- 申请人: Churoo Park , Hyun-Soon Jang , Chull-Soo Kim , Myung-Ho Kim , Seung-Hun Lee , Si-Yeol Lee , Ho-Cheol Lee , Tae-Jin Kim , Yun-Ho Choi
- 申请人地址: KRX Suwon
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KRX Suwon
- 优先权: KRX18130/1992 18991002; KRX18131/1992 19921002; KRX7127/1993 19930427
- 主分类号: G11C11/401
- IPC分类号: G11C11/401 ; G11C7/00 ; G11C7/10 ; G11C11/403 ; G11C11/406 ; G11C11/407 ; G11C11/4076 ; G11C11/408 ; G11C11/409 ; G06F13/16
摘要:
A synchronous dynamic random access memory capable of accessing data in a memory cell array therein in synchronism with a system clock from an external system such as a central processing unit (CPU). The synchronous DRAM receives an external clock and includes a plurality of memory banks each including a plurality of memory cells and operable in either an active cycle or a precharge cycle, a circuit for receiving a row address strobe signal and latching a logic level of the row address strobe signal in response to the clock, an address input circuit for receiving an externally generated address selecting one of the memory banks, and a circuit for receiving the latched logic level and the address from the address input circuit and for outputting an activation signal to the memory bank selected by the address and an inactivation signals to unselected memory banks when the latched logic level is a first logic level, so that the selected memory bank responsive to the activation signal operates in the active cycle while the unselected memory banks responsive to the inactivation signals operate in the precharge cycle.
公开/授权文献
- US5225657A Plasma-arc torch system with filter 公开/授权日:1993-07-06
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