发明授权
US5840374A Method of forming a SiO.sub.2 passivation film on a plastic substrate
失效
在塑料基板上形成SiO 2钝化膜的方法
- 专利标题： Method of forming a SiO.sub.2 passivation film on a plastic substrate
- 专利标题（中）： 在塑料基板上形成SiO 2钝化膜的方法
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申请号： US661500申请日： 1996-06-11
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公开(公告)号： US5840374A公开(公告)日： 1998-11-24
- 发明人: Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
- 申请人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
- 申请人地址： JPX Kanagawa-ken JPX Aichi-ken
- 专利权人： Nihon Shinku Gijutsu Kabushiki Kaisha,Brother Kogyo Kabushiki Kaisha
- 当前专利权人： Nihon Shinku Gijutsu Kabushiki Kaisha,Brother Kogyo Kabushiki Kaisha
- 当前专利权人地址： JPX Kanagawa-ken JPX Aichi-ken
- 优先权： JPX5-335714 19931228
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; B05D3/06 ; C23C16/22
摘要：
An SiO.sub.2 passivation film is formed on a surface of a substrate made of a plastic material by plasma chemical vapor deposition (CVD) process in which organic oxysilane is used as a raw gas. Instead of a reactive gas having an ashing effect, Ar, He or NH.sub.3 is used as a reactive gas which serves as an auxiliary for decomposing the raw gas at a temperature not greater than a temperature at which the substrate is thermally deformed (i.e., about 250.degree. C.). The ashing of the substrate by oxygen or hydrogen radicals is thus prevented.
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