公开(公告)号：US5554418A

公开(公告)日：1996-09-10

申请号：US310760

申请日：1994-09-27

申请人： Kazuyuki Ito ,  Kyuzo Nakamura ,  Michio Ishikawa ,  Jun Togawa ,  Noriaki Tani ,  Masanori Hashimoto ,  Yumiko Ohashi

发明人： Kazuyuki Ito ,  Kyuzo Nakamura ,  Michio Ishikawa ,  Jun Togawa ,  Noriaki Tani ,  Masanori Hashimoto ,  Yumiko Ohashi

IPC分类号： C08J7/06 ,  C01B33/12 ,  C23C16/40 ,  G11B5/72 ,  G11B5/73 ,  G11B5/738 ,  G11B5/84 ,  G11B7/26 ,  B05D3/06 ,  C23C16/00

CPC分类号： C23C16/402

摘要： A passivation film is formed by plasma CVD process in which organic oxysilane is used as a raw gas. When an SiO.sub.2 film as the passivation film is formed on a surface of a substrate, Ar, He or NH.sub.3 gas is used as a reactive gas which serves as an auxiliary for decomposing the raw gas. Ashing of the substrate by oxygen or hydrogen radicals is thus prevented. Fluorine group gas of CF.sub.4 or NF.sub.3 may be added to the reactive gas. The SiO.sub.2 film as a passivation film as described above may be formed first as an initial passivation film and then another passivation film may be formed on top of the initial passivation film by using a reactive gas having an ashing effect such as O.sub.2, N.sub.2 O, O.sub.3 and H.sub.2.

摘要翻译： 通过等离子体CVD工艺形成钝化膜，其中使用有机氧化硅作为原料气体。 当在基板的表面上形成作为钝化膜的SiO 2膜时，使用Ar，He或NH 3气体作为用作分解原料气体的辅助剂的反应性气体。 因此防止了氧或氢自由基的底物灰化。 可以将CF4或NF3的氟族气体加入反应气体中。 可以首先形成如上所述的钝化膜的SiO 2膜作为初始钝化膜，然后通过使用具有灰化效应的反应气体，例如O 2，N 2 O，O 3，可以在初始钝化膜的顶部形成另一钝化膜 和H2。

公开(公告)号：US5840374A

公开(公告)日：1998-11-24

申请号：US661500

申请日：1996-06-11

申请人： Kazuyuki Ito ,  Kyuzo Nakamura ,  Michio Ishikawa ,  Jun Togawa ,  Noriaki Tani ,  Masanori Hashimoto ,  Yumiko Ohashi

发明人： Kazuyuki Ito ,  Kyuzo Nakamura ,  Michio Ishikawa ,  Jun Togawa ,  Noriaki Tani ,  Masanori Hashimoto ,  Yumiko Ohashi

IPC分类号： C23C16/40 ,  B05D3/06 ,  C23C16/22

CPC分类号： C23C16/401

摘要： An SiO.sub.2 passivation film is formed on a surface of a substrate made of a plastic material by plasma chemical vapor deposition (CVD) process in which organic oxysilane is used as a raw gas. Instead of a reactive gas having an ashing effect, Ar, He or NH.sub.3 is used as a reactive gas which serves as an auxiliary for decomposing the raw gas at a temperature not greater than a temperature at which the substrate is thermally deformed (i.e., about 250.degree. C.). The ashing of the substrate by oxygen or hydrogen radicals is thus prevented.

摘要翻译： 通过等离子体化学气相沉积（CVD）工艺在由塑料材料制成的衬底的表面上形成SiO 2钝化膜，其中使用有机氧化硅作为原料气体。 代替具有灰化效应的反应气体，使用Ar，He或NH 3作为反应气体，其用作在不高于基底热变形的温度（即，约 250℃）。 因此防止了氧或氢自由基对衬底的灰化。