Invention Grant
- Patent Title: Semiconductor device including T1 GaAs layer
- Patent Title (中): 半导体器件包括T1 GaAs层
-
Application No.: US861582Application Date: 1997-05-22
-
Publication No.: US5841156APublication Date: 1998-11-24
- Inventor: Yasutomo Kajikawa , Zempei Kawazu
- Applicant: Yasutomo Kajikawa , Zempei Kawazu
- Applicant Address: JPX Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JPX Tokyo
- Priority: JPX8-270118 19961011
- Main IPC: H01L21/20
- IPC: H01L21/20 ; B82Y10/00 ; B82Y20/00 ; B82Y40/00 ; H01L21/331 ; H01L21/338 ; H01L29/737 ; H01L29/778 ; H01L29/812 ; H01S5/00 ; H01S5/02 ; H01S5/323 ; H01S5/343 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109
Abstract:
A semiconductor device includes a GaAs substrate having a lattice constant; and a III-V mixed crystal semiconductor layer disposed on the GaAs substrate, containing Tl (thallium) and Ga (gallium) as Group III elements and As (arsenic) as a Group V element, and having a lattice constant larger than the lattice constant of the GaAs substrate. Therefore, the lattice mismatch of the III-V mixed crystal semiconductor layer with GaAs and the band gap energy of the III-V mixed crystal semiconductor layer are smaller than those of an InGaAs layer, resulting in a semiconductor device with improved operating characteristics and reliability.
Public/Granted literature
- US5185105A Splash bar construction for a cooling tower Public/Granted day:1993-02-09
Information query
IPC分类:
