公开(公告)号：US09824911B2

公开(公告)日：2017-11-21

申请号：US13785134

申请日：2013-03-05

Applicant: Akihito Ohno ,  Zempei Kawazu

Inventor： Akihito Ohno ,  Zempei Kawazu

IPC: H01L21/683 ,  H01L21/687

CPC classification number: H01L21/6835 ,  H01L21/68757

Abstract: A substrate support for supporting a substrate when forming a film on a surface of the substrate by chemical vapor deposition. The substrate support includes a graphite material having a recessed portion for accommodating the substrate, a multilayer film on the recessed portion and consisting of a first degassing prevention film of SiC and a sublimation prevention film of TaC or HfC stacked together, and a second degassing prevention film of SiC located on portions of the graphite material other than the recessed portion.

公开(公告)号：US5739552A

公开(公告)日：1998-04-14

申请号：US547315

申请日：1995-10-24

Applicant: Tatsuya Kimura ,  Zempei Kawazu

Inventor： Tatsuya Kimura ,  Zempei Kawazu

IPC: H01L25/075 ,  H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/00

CPC classification number: H01L33/20 ,  H01L25/0756 ,  H01L27/15 ,  H01L2924/0002 ,  H01L33/08 ,  H01L33/24

Abstract: A method of fabricating a light emitting diode (LED) device producing visible light includes growing layers of an LED emitting blue light to form a blue LED; growing layers of an LED emitting green light to form a green LED; growing layers of an LED emitting red light to form a red LED; and uniting the three LEDs directly to each other by annealing. Therefore, an LED device that can emit light of all three colors from the same region of the LED device with variable light intensity is obtained.

Abstract translation: 制造产生可见光的发光二极管（LED）器件的方法包括发射蓝光的LED的生长层以形成蓝色LED; 发展绿色LED的LED的生长层以形成绿色LED; 生长层的LED发出红光以形成红色LED; 并通过退火将三个LED直接连接在一起。 因此，可以获得能够从具有可变光强度的LED装置的相同区域发射全部三种颜色的LED的LED装置。

公开(公告)号：US5701321A

公开(公告)日：1997-12-23

申请号：US623378

申请日：1996-03-28

Applicant: Norio Hayafuji ,  Zempei Kawazu

Inventor： Norio Hayafuji ,  Zempei Kawazu

IPC: H01S5/00 ,  H01L27/15 ,  H01S5/02 ,  H01S5/026 ,  H01S5/183 ,  H01S5/323 ,  H01S3/19 ,  H01S3/08

CPC classification number: H01S5/18305 ,  H01L27/156 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/18369 ,  H01S5/32341

Abstract: A semiconductor laser includes an electrically insulating substrate having an opening; a first conductivity type first contact layer within the opening; a laminated semiconductor layer structure on the first contact layer and comprising a first cladding layer, an active layer, a second cladding layer, and a second contact layer wherein the first contact layer includes an aperture within the opening; a first electrode disposed on the electrically insulating substrate and extending to and contacting the first contact layer; and a second electrode in electrical contact with the second contact layer. The substrate is preferably sapphire, MgO, and spinel and the semiconductor layers are preferably GaN materials so that the laser emits short wavelength light. An electrode makes direct, reliable contact to the first cladding layer through an opening in the electrically insulating substrate without the need of mechanically working or etching the substrate.

Abstract translation: 半导体激光器包括具有开口的电绝缘基板; 在开口内的第一导电类型的第一接触层; 在所述第一接触层上的层叠半导体层结构，包括第一覆层，有源层，第二覆层和第二接触层，其中所述第一接触层在所述开口内包括孔; 第一电极，设置在所述电绝缘基板上并延伸到所述第一接触层并接触所述第一接触层; 以及与所述第二接触层电接触的第二电极。 基板优选为蓝宝石，MgO和尖晶石，半导体层优选为GaN材料，使得激光发射短波长的光。 电极通过电绝缘衬底中的开口直接，可靠地接触第一包层，而不需要机械加工或蚀刻衬底。

公开(公告)号：US20130327274A1

公开(公告)日：2013-12-12

申请号：US13785134

申请日：2013-03-05

Applicant: Akihito Ohno ,  Zempei Kawazu

Inventor： Akihito Ohno ,  Zempei Kawazu

IPC: H01L21/683

CPC classification number: H01L21/6835 ,  H01L21/68757

Abstract: A substrate support for supporting a substrate when forming a film on a surface of the substrate by chemical vapor deposition. The substrate support includes a graphite material having a recessed portion for accommodating the substrate, a multilayer film on the recessed portion and consisting of a first degassing prevention film of SiC and a sublimation prevention film of TaC or HfC stacked together, and a second degassing prevention film of SiC located on portions of the graphite material other than the recessed portion.

Abstract translation: 一种用于在通过化学气相沉积在衬底的表面上形成膜时支撑衬底的衬底支撑件。 基板支撑体包括具有用于容纳基板的凹部的石墨材料，在凹部上的多层膜，由SiC的第一脱气膜和层叠在一起的TaC或HfC的升华保护膜构成，第二脱气防止 位于除了凹部以外的石墨材料的部分上的SiC膜。

公开(公告)号：US20100003778A1

公开(公告)日：2010-01-07

申请号：US12274435

申请日：2008-11-20

Applicant: Hitoshi Tada ,  Tsutomu Yamaguchi ,  Zempei Kawazu ,  Yuji Okura

Inventor： Hitoshi Tada ,  Tsutomu Yamaguchi ,  Zempei Kawazu ,  Yuji Okura

IPC: H01L33/00

CPC classification number: H01S5/22 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2214 ,  H01S5/2224

Abstract: A method of manufacturing a semiconductor laser includes sequentially forming a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on top of one another on a semiconductor substrate; forming a ridge in the second conductivity type semiconductor layer; forming a first insulating film on the second conductivity type semiconductor layer at a first temperature; forming a second insulating film on the first insulating film at a second temperature, lower than the first temperature; and forming an electrode on the second insulating film.

Abstract translation: 半导体激光器的制造方法包括在半导体基板上依次形成第一导电型半导体层，有源层和第二导电型半导体层， 在第二导电类型半导体层中形成脊; 在第一温度下在第二导电类型半导体层上形成第一绝缘膜; 在低于第一温度的第二温度下在第一绝缘膜上形成第二绝缘膜; 以及在所述第二绝缘膜上形成电极。

公开(公告)号：US5764673A

公开(公告)日：1998-06-09

申请号：US937152

申请日：1997-09-25

Applicant: Zempei Kawazu ,  Norio Hayafuji ,  Diethard Marx

Inventor： Zempei Kawazu ,  Norio Hayafuji ,  Diethard Marx

IPC: H01L33/00 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01L33/34 ,  H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/323 ,  H01S3/19 ,  H01L31/0256

CPC classification number: H01S5/32341 ,  H01L33/007 ,  H01S2301/173 ,  H01S2304/04 ,  H01S5/0202 ,  H01S5/021 ,  H01S5/2231

Abstract: A semiconductor light emitting device includes an Si substrate having opposed front and rear surfaces; an amorphous or polycrystalline first buffer layer disposed on the front surface of the Si substrate; and GaN series compound semiconductor layers successively disposed on the first buffer layer and including a light emitting region where light is produced by recombination of electrons and holes. In this light emitting device, since the Si substrate is cleavable, it is possible to produce resonator facets by cleaving. In addition, since the Si substrate is electrically conductive, a structure in which a pair of electrodes are respectively located on opposed upper and lower surfaces of the light emitting device is realized. Further, since the Si substrate is inexpensive, the light emitting device is obtained at low cost. Furthermore, since the amorphous or polycrystalline first buffer layer is disposed on the Si substrate, in the initial state of the growth of the GaN series compound semiconductor layers, plenty of growth nuclei are created, and the growth nuclei promote two-dimensional growth. As a result, high-quality GaN series compound semiconductor layers are obtained.

Abstract translation: 半导体发光器件包括具有相对的前表面和后表面的Si衬底; 设置在Si衬底的前表面上的非晶或多晶第一缓冲层; 以及连续配置在第一缓冲层上的GaN系化合物半导体层，具有通过电子和空穴的复合产生光的发光区域。 在该发光器件中，由于Si衬底是可切割的，所以可以通过切割产生谐振器面。 此外，由于Si衬底是导电的，所以实现了一对电极分别位于发光器件的相对的上表面和下表面上的结构。 此外，由于Si基板便宜，所以以低成本获得发光器件。 此外，由于非晶或多晶第一缓冲层设置在Si衬底上，在GaN系化合物半导体层的生长的初始状态下，产生大量的生长核，并且生长核促进二维生长。 结果，获得了高质量的GaN系化合物半导体层。

公开(公告)号：US07378351B2

公开(公告)日：2008-05-27

申请号：US11143685

申请日：2005-06-03

Applicant: Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Kazushige Kawasaki ,  Zempei Kawazu ,  Yuji Abe

Inventor： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Kazushige Kawasaki ,  Zempei Kawazu ,  Yuji Abe

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/28575 ,  H01L21/30621 ,  H01L33/0075 ,  H01S5/32341

Abstract: A nitride semiconductor device is manufactured by the step of forming a nitride semiconductor layer form on a GaN substrate main surface, the step of polishing a back surface of the GaN substrate formed with the above-mentioned nitride semiconductor layer, the step of dry etching the back surface of the GaN substrate subjected to the above-mentioned polishing by using a gas mixture of chlorine and oxygen, and the step of forming an n-type electrode on the back surface of the GaN substrate subjected to the above-mentioned dry etching.

Abstract translation: 氮化物半导体器件通过在GaN衬底主表面上形成氮化物半导体层形成步骤，抛光由上述氮化物半导体层形成的GaN衬底的背面的步骤，干法蚀刻 通过使用氯和氧的气体混合物进行上述抛光的GaN衬底的背面，以及在经受上述干蚀刻的GaN衬底的背面上形成n型电极的步骤。

公开(公告)号：US07151004B2

公开(公告)日：2006-12-19

申请号：US10790199

申请日：2004-03-02

Applicant: Yoshihisa Tashiro ,  Zempei Kawazu ,  Harumi Nishiguchi ,  Tetsuya Yagi ,  Akihiro Shima

Inventor： Yoshihisa Tashiro ,  Zempei Kawazu ,  Harumi Nishiguchi ,  Tetsuya Yagi ,  Akihiro Shima

IPC: H01L31/26

CPC classification number: H01S5/162 ,  H01S2302/00

Abstract: In fabricating a semiconductor laser producing light with a wavelength of 770 to 810 nm, impurities are introduced into an MQW active layer near a light emitting facet of the laser to form a disordered region constituting a window layer. Pump light is applied to the window layer to generate photoluminescence whose wavelength λ dpl (nm) is measured. A blue shift amount λ bl (nm) is defined as the difference between the wavelength λ apl (nm) 0f photoluminescence generated by application of pump light to the active layer on the one hand, and the wavelength λ dpl (nm) of photoluminescence from the window layer under pump light irradiation on the other hand. The blue shift amount λ bl is referenced during the fabrication process in order to predict catastrophic optical damage levels of semiconductor lasers.

Abstract translation: 在制造波长为770〜810nm的光的半导体激光器中，杂质被引入激光器的发光面附近的MQW有源层，形成构成窗口层的无序区域。 将泵浦光施加到窗口层以产生其波长λdpl（nm）的光致发光。 蓝色移位量λbl（nm）被定义为一方面通过将泵浦光施加到有源层而产生的波长λapl（nm）Of的光致发光和从一方面发光的波长λdpl（nm） 另一方面在泵浦光照射下的窗口层。 为了预测半导体激光器的灾难性光损伤水平，在制造过程中参考蓝移量λbl。

公开(公告)号：US5841156A

公开(公告)日：1998-11-24

申请号：US861582

申请日：1997-05-22

Applicant: Yasutomo Kajikawa ,  Zempei Kawazu

Inventor： Yasutomo Kajikawa ,  Zempei Kawazu

IPC: H01L21/20 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L21/331 ,  H01L21/338 ,  H01L29/737 ,  H01L29/778 ,  H01L29/812 ,  H01S5/00 ,  H01S5/02 ,  H01S5/323 ,  H01S5/343 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC classification number: H01L33/30 ,  B82Y20/00 ,  H01S5/323 ,  H01S5/34313 ,  H01S5/0211 ,  H01S5/34306

Abstract: A semiconductor device includes a GaAs substrate having a lattice constant; and a III-V mixed crystal semiconductor layer disposed on the GaAs substrate, containing Tl (thallium) and Ga (gallium) as Group III elements and As (arsenic) as a Group V element, and having a lattice constant larger than the lattice constant of the GaAs substrate. Therefore, the lattice mismatch of the III-V mixed crystal semiconductor layer with GaAs and the band gap energy of the III-V mixed crystal semiconductor layer are smaller than those of an InGaAs layer, resulting in a semiconductor device with improved operating characteristics and reliability.

Abstract translation: 半导体器件包括具有晶格常数的GaAs衬底; 和设置在GaAs衬底上的III-V族混合晶体半导体层，其含有T1（铊）和Ga（镓）作为III族元素，As（砷）作为V族元素，并且具有大于晶格常数的晶格常数 的GaAs衬底。 因此，III-V混合晶体半导体层与GaAs的晶格失配和III-V混晶半导体层的带隙能比InGaAs层的晶格失配小，导致具有改善的工作特性和可靠性的半导体器件 。

公开(公告)号：US20130109134A1

公开(公告)日：2013-05-02

申请号：US13535434

申请日：2012-06-28

Applicant: Susumu HATAKENAKA ,  Zempei KAWAZU ,  Hiroyuki KAWAHARA ,  Takashi NAGIRA

Inventor： Susumu HATAKENAKA ,  Zempei KAWAZU ,  Hiroyuki KAWAHARA ,  Takashi NAGIRA

IPC: H01L21/322

CPC classification number: H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/8252

Abstract: A method of manufacturing a semiconductor device, includes introducing a substrate into a growth furnace, forming impurity absorption layers on the substrate and on inner walls of the growth furnace, the impurity absorption layers absorbing impurities on a surface of the substrate and impurities in the growth furnace, etching and removing the impurity absorption layers and a portion of the substrate to produce a thinned substrate, forming a buffer layer on the thinned substrate, and forming semiconductor layers on the buffer layer.

Abstract translation: 一种制造半导体器件的方法，包括将衬底引入生长炉中，在衬底和生长炉的内壁上形成杂质吸收层，吸收衬底表面上的杂质的杂质吸收层和生长中的杂质 炉，蚀刻和去除杂质吸收层和衬底的一部分以产生变薄的衬底，在薄化衬底上形成缓冲层，并在缓冲层上形成半导体层。