发明授权
- 专利标题: Method for fabricating a semiconductor device including a step for forming an amorphous silicon layer followed by a crystallization thereof
- 专利标题(中): 一种制造半导体器件的方法,包括用于形成非晶硅层的步骤,接着进行结晶
-
申请号: US559813申请日: 1995-11-17
-
公开(公告)号: US5843829A公开(公告)日: 1998-12-01
- 发明人: Masaki Kuramae , Fumitake Mieno
- 申请人: Masaki Kuramae , Fumitake Mieno
- 申请人地址: JPX Kawasaki JPX Kawasaki
- 专利权人: Fujitsu Limited,VLSI Limited
- 当前专利权人: Fujitsu Limited,VLSI Limited
- 当前专利权人地址: JPX Kawasaki JPX Kawasaki
- 优先权: JPX5-229196 19930914
- 主分类号: C23C16/52
- IPC分类号: C23C16/52 ; H01L21/02 ; H01L21/20 ; H01L21/205 ; H01L21/822 ; H01L21/8242 ; H01L27/04 ; H01L27/10 ; H01L27/108
摘要:
A method for fabricating a semiconductor device includes the steps of depositing an amorphous silicon layer on a substrate, and forming an oxidation film on a surface of the amorphous silicon layer by treating the surface of the amorphous silicon layer with an oxidation gas. The forming step occurs before crystallization of the amorphous silicon layer.