发明授权
- 专利标题: Method of preparing silicon nitride porous body
- 专利标题(中): 氮化硅多孔体的制备方法
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申请号: US686818申请日: 1996-07-26
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公开(公告)号: US5846460A公开(公告)日: 1998-12-08
- 发明人: Takahiro Matsuura , Chihiro Kawai , Akira Yamakawa
- 申请人: Takahiro Matsuura , Chihiro Kawai , Akira Yamakawa
- 申请人地址: JPX Osaka
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX7-190601 19950726; JPX8-183113 19960712
- 主分类号: B01D39/20
- IPC分类号: B01D39/20 ; B01D71/02 ; B01J27/24 ; B01J32/00 ; B01J35/04 ; C04B35/584 ; C04B38/00 ; C04B38/04
摘要:
A silicon nitride ceramic porous body having excellent acid and alkali resistance, mechanical strength, and durability can be employed as a filter or a catalytic carrier. The silicon nitride porous body contains a plurality of silicon nitride crystal grains with pores formed in grain boundary parts thereof, or includes a body part and a pore part wherein the body part is formed by a plurality of silicon nitride crystal grains and the pore part forms a three-dimensional network structure. The body part is formed by at least 90 vol. % of silicon nitride crystal grains, which are directly bonded to each other. In order to prepare the finished ceramic porous body, a porous body compact which is mainly composed of silicon nitride, is brought into contact with an acid and/or an alkali so that a component other than silicon nitride is partially or entirely dissolved and removed from the compact. The compact is prepared from a mixed powder of silicon nitride powder and at least one of a rare earth compound powder, a transition metal compound powder, and a bismuth compound, which is heat treated in the temperature range from 1600.degree. C. to 2100.degree. C.
公开/授权文献
- US4538244A Semiconductor memory device 公开/授权日:1985-08-27
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