发明授权
- 专利标题： Semiconductor device having a second insulating layer which includes carbon or fluorine at a density lower than a first insulating layer
- 专利标题（中）： 具有第二绝缘层的半导体器件包括密度低于第一绝缘层的碳或氟
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申请号： US831967申请日： 1997-04-02
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公开(公告)号： US5850102A公开(公告)日： 1998-12-15
- 发明人: Tadashi Matsuno
- 申请人： Tadashi Matsuno
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX8-081541 19960403
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/28 ; H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L23/58
摘要：
This invention is related to a metallization of Cu. The semiconductor device comprises a first insulating layer having a groove in a surface thereof, a second insulating layer on a surface of the groove, made of a material having a low density of crystal defects in comparison with that of the first insulating layer, and a wiring layer buried in the groove, surrounded by the second insulating layer.
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