- 专利标题： Process for production of semiconductor substrate
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申请号： US863717申请日： 1997-05-27
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公开(公告)号： US5856229A公开(公告)日： 1999-01-05
- 发明人: Kiyofumi Sakaguchi , Takao Yonehara
- 申请人： Kiyofumi Sakaguchi , Takao Yonehara
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-039389 19940310; JPX7-045441 19950306
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/02 ; H01L21/20 ; H01L23/12 ; H01L23/15 ; H01L27/12 ; H01L21/76
摘要：
A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.
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