发明授权
US5859760A Microelectronic capacitors having tantalum pentoxide dielectrics and
oxygen barriers
失效
具有五氧化二钽电介质和氧气屏障的微电子电容器
- 专利标题： Microelectronic capacitors having tantalum pentoxide dielectrics and oxygen barriers
- 专利标题（中）： 具有五氧化二钽电介质和氧气屏障的微电子电容器
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申请号： US843799申请日： 1997-04-21
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公开(公告)号： US5859760A公开(公告)日： 1999-01-12
- 发明人: In-sung Park , Kyung-hoon Kim
- 申请人： In-sung Park , Kyung-hoon Kim
- 申请人地址： KRX Suwon
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KRX Suwon
- 优先权： KRX95-29828 19950913
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/02 ; H01L21/31 ; H01L21/316 ; H01L21/318 ; H01L21/822 ; H01G4/06
摘要：
A microelectronic capacitor is formed by nitrating the surface of a conducting electrode on a microelectronic substrate. The nitrated surface of the conductive electrode is then oxidized. The nitrating and oxidizing steps collectively form a film of silicon oxynitride on the conductive electrode. A tantalum pentoxide film is then formed on the oxidized and nitrated surface of the conductive electrode. The tantalum pentoxide film may then be thermally treated in the presence of oxygen gas. High performance microelectronic capacitors are thereby provided.
公开/授权文献
- US5238781A Photosensitive compositions based on polyphenols and acetals 公开/授权日：1993-08-24
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