发明授权
- 专利标题： Pattern formation method
- 专利标题（中）： 图案形成方法
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申请号： US892070申请日： 1997-07-14
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公开(公告)号： US5866302A公开(公告)日： 1999-02-02
- 发明人: Koji Matsuoka , Akiko Katsuyama , Takahiro Matsuo , Masayuki Endo
- 申请人： Koji Matsuoka , Akiko Katsuyama , Takahiro Matsuo , Masayuki Endo
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX8-185725 19960716
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; G03F7/09 ; G03F7/11 ; G03F7/16 ; H01L21/027 ; H01L21/311 ; H01L21/316 ; G03F7/00
摘要：
A BPSG film is formed on a semiconductor substrate and caused to reflow under an atmosphere of flowing Ar gas. Then, a chemically amplified resist is applied to the surface of the BPSG film to form a resist film, which is exposed to the irradiation of a KrF excimer laser through a mask. Since no lone pair of electrons exists on the surface of the BPSG film, an acid in the resist film is not deactivated and hence a reaction is evenly induced by an acid catalyst. After the development of the resist film, a resist pattern having an excellent profile with no footing is obtained.
公开/授权文献
- USD303956S Computer display terminal 公开/授权日：1989-10-10
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