- 专利标题： Borderless vias with HSQ gap filled patterned metal layers
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申请号： US951592申请日： 1997-10-16
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公开(公告)号： US5866945A公开(公告)日： 1999-02-02
- 发明人: Robert C. Chen , Jeffrey A. Shields , Robert Dawson , Khanh Tran
- 申请人： Robert C. Chen , Jeffrey A. Shields , Robert Dawson , Khanh Tran
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices
- 当前专利权人： Advanced Micro Devices
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/314 ; H01L21/768 ; H01L23/48 ; H01L23/52
摘要：
Spin-on HSQ is employed to gap fill metal layers in manufacturing a high density, multi-metal layer semiconductor device. The degradation of deposited HSQ layers during formation of borderless vias, as from photoresist stripping using an O.sub.2 -containing plasma, is overcome by treating the degraded HSQ layer with an H.sub.2 -containing plasma to restore the dangling Si--H bonds, thereby passivating the surface and preventing moisture absorption, before filling the via opening with conductive material, such as a barrier layer.
公开/授权文献
- US5269475A Mill for condiments 公开/授权日：1993-12-14
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