发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US767315申请日： 1996-12-16
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公开(公告)号： US5869363A公开(公告)日： 1999-02-09
- 发明人: Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Akiharu Miyanaga
- 申请人： Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Akiharu Miyanaga
- 申请人地址： JPX Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa-ken
- 优先权： JPX7-347820 19951215
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/322 ; H01L21/00
摘要：
In a method of manufacturing a semiconductor device, a first heat treatment for crystallization is conducted after nickel elements are introduced in an amorphous silicon film. Then, after the crystalline silicon film is obtained, a heat treatment is again conducted through the heating method which is identical with the first heat treatment. In this state, HCl or the like is added to the atmosphere to conduct gettering of the nickel elements remaining in the crystalline silicon film. With this process, there can be obtained a crystalline silicon film low in the concentration of the metal elements and high in crystallinity.
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