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公开(公告)号：US06331475B1
公开(公告)日：2001-12-18
申请号：US09190408
申请日：1998-10-23
IPC分类号： H01L2120
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022
摘要： In producing a thin film transistor (TFT), an silicon oxide film is formed as an under film on a glass substrate, and then an amorphous silicon film is formed therein. A metal element which promotes crystallization of silicon is disposed in contact with a surface of the amorphous silicon film. A thermal processing for the amorphous silicon film is performed at a crystallization temperature of the amorphous silicon film or higher. At the thermal processing, a glass substrate is placed on an object having constant flatness. Cooling is performed to obtain a crystalline silicon film wherein the substrate is not distorted and deformed.
摘要翻译： 在制造薄膜晶体管（TFT）时，在玻璃基板上形成作为底膜的氧化硅膜，然后在其中形成非晶硅膜。 促进硅结晶的金属元素与非晶硅膜的表面接触地设置。 在非晶硅膜的结晶温度以上进行非晶硅膜的热处理。 在热处理中，将玻璃基板放置在具有恒定平坦度的物体上。 进行冷却以获得晶体硅膜，其中基底不变形和变形。
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2.发明授权公开(公告)号：US06635900B1
公开(公告)日：2003-10-21
申请号：US09026049
申请日：1998-02-19
IPC分类号： H01L2915
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/0262 , H01L21/2022
摘要： In producing a thin film transistor (TFT), an silicon oxide film is formed as an under film on a glass substrate, and then an amorphous silicon film is formed therein. A metal element which promotes crystallization of silicon is disposed in contact with a surface of the amorphous silicon film. A thermal processing for the amorphous silicon film is performed at a crystallization temperature of the amorphous silicon film or higher. At the thermal processing, a glass substrate is placed on an object having constant flatness. Cooling is performed to obtain a crystalline silicon film wherein the substrate is not distorted and deformed.
摘要翻译： 在制造薄膜晶体管（TFT）时，在玻璃基板上形成作为底膜的氧化硅膜，然后在其中形成非晶硅膜。 促进硅结晶的金属元素与非晶硅膜的表面接触地设置。 在非晶硅膜的结晶温度以上进行非晶硅膜的热处理。 在热处理中，将玻璃基板放置在具有恒定平坦度的物体上。 进行冷却以获得晶体硅膜，其中基底不变形和变形。
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公开(公告)号：US06204101B1
公开(公告)日：2001-03-20
申请号：US09208101
申请日：1998-11-20
IPC分类号： H01L2120
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/0262 , H01L21/2022 , H01L21/3221
摘要： In a method of manufacturing a semiconductor device, a first heat treatment for crystallization is conducted after nickel elements are introduced in an amorphous silicon film. Then, after the crystalline silicon film is obtained, a heat treatment is again conducted through the heating method which is identical with the first heat treatment. In this state, HCl or the like is added to the atmosphere to conduct gettering of the nickel elements remaining in the crystalline silicon film. With this process, there can be obtained a crystalline silicon film low in the concentration of the metal elements and high in crystallinity.
摘要翻译： 在制造半导体器件的方法中，在将镍元素引入非晶硅膜之后进行用于结晶的第一热处理。 然后，在获得结晶硅膜之后，再次通过与第一热处理相同的加热方法进行热处理。 在这种状态下，将HCl等添加到大气中以吸收留在结晶硅膜中的镍元素。 通过该工艺，可以获得金属元素浓度低的结晶硅膜，结晶度高。
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公开(公告)号：US5869363A
公开(公告)日：1999-02-09
申请号：US767315
申请日：1996-12-16
IPC分类号： H01L21/20 , H01L21/322 , H01L21/00
CPC分类号： H01L21/2022 , H01L21/3221
摘要： In a method of manufacturing a semiconductor device, a first heat treatment for crystallization is conducted after nickel elements are introduced in an amorphous silicon film. Then, after the crystalline silicon film is obtained, a heat treatment is again conducted through the heating method which is identical with the first heat treatment. In this state, HCl or the like is added to the atmosphere to conduct gettering of the nickel elements remaining in the crystalline silicon film. With this process, there can be obtained a crystalline silicon film low in the concentration of the metal elements and high in crystallinity.
摘要翻译： 在制造半导体器件的方法中，在将镍元素引入非晶硅膜之后进行用于结晶的第一热处理。 然后，在获得结晶硅膜之后，再次通过与第一热处理相同的加热方法进行热处理。 在这种状态下，将HCl等添加到大气中以吸收留在结晶硅膜中的镍元素。 通过该工艺，可以获得金属元素浓度低的结晶硅膜，结晶度高。
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公开(公告)号：US07375401B2
公开(公告)日：2008-05-20
申请号：US11151290
申请日：2005-06-14
CPC分类号： H01L27/0688 , G02F1/1362 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02675 , H01L27/10805 , H01L27/10873 , H01L27/11 , H01L27/1108 , H01L27/1112 , H01L27/1248 , H01L27/1277 , H01L29/04 , H01L29/66772 , H01L29/78654 , H01L31/076 , H01L31/1824 , H01L31/1872 , H01L2924/0002 , Y02E10/545 , Y02E10/548 , Y02P70/521 , Y10S257/903 , Y10S257/904 , H01L2924/00
摘要： A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an active layer.
摘要翻译： 形成具有侧向生长区域的半导体薄膜，该横向生长区域是大体平行于基底延伸的柱状或针状晶体的集合。 半导体薄膜用具有等效能量的激光或强光照射。 结果，相邻的柱状或针状结晶结合在一起形成基本上不具有晶界的区域，即基本上被认为是单晶的单畴区域。 通过使用单畴区域作为有源层形成半导体器件。
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6.发明申请公开(公告)号：US20070252206A1
公开(公告)日：2007-11-01
申请号：US11670462
申请日：2007-02-02
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/02672 , G02B27/017 , G02B2027/0138 , H01L21/02532 , H01L21/2022 , H01L21/8221 , H01L27/1277 , H01L29/045 , H01L29/665 , H01L29/66757 , H01L29/78621 , H01L29/78654 , H01L29/78675
摘要： A thin film semiconductor transistor structure has a substrate with a dielectric surface, and an active layer made of a semiconductor thin film exhibiting a crystallinity as equivalent to the single-crystalline. To fabricate the transistor, the semiconductor thin film is formed on the substrate, which film includes a mixture of a plurality of crystals which may be columnar crystals and/or capillary crystal substantially parallel to the substrate. The resultant structure is then subject to thermal oxidation in a chosen atmosphere containing halogen, thereby removing away any metallic element as contained in the film. This may enable formation of a mono-domain region in which the individual columnar or capillary crystal is in contact with any adjacent crystals and which is capable of being substantially deemed to be a single-crystalline region without presence or inclusion of any crystal grain boundaries therein. This region is for use in forming the active layer of the transistor.
摘要翻译： 薄膜半导体晶体管结构具有具有电介质表面的基板和由半导体薄膜制成的有源层，其表现出与单晶相当的结晶度。 为了制造晶体管，在衬底上形成半导体薄膜，该薄膜包括可以是基本上平行于衬底的柱状晶体和/或毛细晶体的多个晶体的混合物。 然后在所选择的含有卤素的气氛中对所得结构进行热氧化，从而去除膜中所含的任何金属元素。 这可以形成单畴区域，其中单个柱状或毛细晶体晶体与任何相邻的晶体接触，并且其能够基本上被认为是单晶区域，而不存在或包含任何晶粒边界 。 该区域用于形成晶体管的有源层。
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7.发明授权公开(公告)号：US06458637B1
公开(公告)日：2002-10-01
申请号：US09916789
申请日：2001-07-27
IPC分类号： H01L2100
CPC分类号： H01L21/02675 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02672 , H01L21/2022 , H01L27/12 , H01L27/1277 , H01L27/1281 , H01L29/66757 , H01L29/66772 , H01L29/78654 , H01L29/78675
摘要： The present invention is related to a thin film semiconductor which can be regarded as substantially a single crystal and a semiconductor device comprising an active layer formed by the thin film semiconductor. At least a concave or convex pattern is formed intentionally on a insulating film provided in contact with the lower surface of an amorphous silicon film, whereby at least a site is formed in which a metal element for accelerating crystallization can be segregated. Therefore, a crystal nuclei is selectively formed in a portion where the concave or convex pattern is located, which carries out controlling a crystal diameter. Thus, a crystalline silicon film is obtained. A crystallinity of the crystalline silicon film is improved by the irradiation of a laser light or an intense light having an energy equivalent to that of the laser light, whereby a monodomain region in which no grain boundary substantially exit is formed.
摘要翻译： 本发明涉及可以被认为是单晶的薄膜半导体和包括由薄膜半导体形成的有源层的半导体器件。 在与非晶硅膜的下表面接触的绝缘膜上有意形成凹凸图案，由此形成至少一个可以分离用于加速结晶的金属元素的部位。 因此，在凹凸图案所在的部分中选择性地形成晶体核，其实现晶体直径的控制。 因此，得到结晶硅膜。 通过照射具有与激光的能量相当的能量的激光或强光，提高了结晶硅膜的结晶度，从而形成了没有晶界基本上排出的单畴区域。
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公开(公告)号：US06452211B1
公开(公告)日：2002-09-17
申请号：US09095027
申请日：1998-06-09
IPC分类号： H01L2904
CPC分类号： H01L29/045 , G02F1/13454 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78675 , H01L29/78678 , Y10S148/122
摘要： A semiconductor thin film having extremely superior crystallinity and a semiconductor device using the semiconductor thin film having high performance are provided. The semiconductor thin film is manufactured in such a manner that after an amorphous semiconductor thin film is crystallized by using a catalytic element, a heat treatment is carried out in an atmosphere containing a halogen element to remove the catalytic element. The thus obtained crystalline semiconductor thin film has substantially {110} orientation. The concentration of C, N, and S remaining in the final semiconductor thin film is less than 5×1018 atoms/cm3, and the concentration of O is less than 1.5×1019 atoms/cm3.
摘要翻译： 提供了具有非常优异的结晶度的半导体薄膜和使用具有高性能的半导体薄膜的半导体器件。 制造半导体薄膜，使得在通过使用催化剂元素使无定形半导体薄膜结晶之后，在含有卤素元素的气氛中进行热处理以除去催化元素。 由此获得的晶体半导体薄膜基本上具有{110}取向。 残留在最终半导体薄膜中的C，N和S的浓度小于5×1018原子/ cm3，O的浓度小于1.5×1019原子/ cm3。
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公开(公告)号：US6133073A
公开(公告)日：2000-10-17
申请号：US65654
申请日：1998-04-23
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/00
CPC分类号： H01L29/78675 , H01L21/2022 , H01L27/12 , H01L27/1277 , H01L27/1281 , H01L29/66757 , H01L29/66772 , H01L29/78654
摘要： The present invention is related to a thin film semiconductor which can be regarded as substantially a single crystal and a semiconductor device comprising an active layer formed by the thin film semiconductor. At least a concave or convex pattern is formed intentionally on a insulating film provided in contact with the lower surface of an amorphous silicon film, whereby at least a site is formed in which a metal element for accelerating crystallization can be segregated. Therefore, a crystal nuclei is selectively formed in a portion where the concave or convex pattern is located, which carries out controlling a crystal diameter. Thus, a crystalline silicon film is obtained. A crystallinity of the crystalline silicon film is improved by the irradiation of a laser light or an intense light having an energy equivalent to that of the laser light, whereby a monodomain region in which no grain boundary substantially exit is formed.
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公开(公告)号：US5789762A
公开(公告)日：1998-08-04
申请号：US526935
申请日：1995-09-12
申请人： Jun Koyama , Yasuhiko Takemura , Masahiko Hayakawa , Shunpei Yamazaki , Akiharu Miyanaga , Hisashi Ohtani
发明人： Jun Koyama , Yasuhiko Takemura , Masahiko Hayakawa , Shunpei Yamazaki , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L31/036 , H01L29/04
CPC分类号： H01L27/1214
摘要： It is intended to provide a semiconductor circuit including thin-film transistors (TFTs) having a small leak current and TFTs capable of operating at high speed, and a method for manufacturing such a circuit. A material containing a catalyst element is selectively formed so as to be in close contact with an amorphous silicon film, or a catalyst element is selectively introduced into an amorphous silicon film. The amorphous silicon film thus processed is crystallized by illumination with laser light or strong light equivalent to it. A crystalline silicon area with a small amount of catalyst element is used for TFTs in a pixel circuit and a crystalline silicon area with a large amount of catalyst element is used for TFTs in peripheral circuits of an active matrix circuit.
摘要翻译： 旨在提供一种具有漏电流小的薄膜晶体管（TFT）和能够高速工作的TFT的半导体电路及其制造方法。 选择性地形成含有催化剂元素的材料以与非晶硅膜紧密接触，或者将催化剂元素选择性地引入到非晶硅膜中。 这样处理的非晶硅膜通过照射激光或相当于其的强光而结晶。 具有少量催化剂元素的晶体硅区域用于像素电路中的TFT，并且具有大量催化剂元素的晶体硅区域用于有源矩阵电路的外围电路中的TFT。
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