Invention Grant
- Patent Title: Repairable memory module and method of repairing memory modules
- Patent Title (中): 可修复的内存模块和修复内存模块的方法
-
Application No.: US907642Application Date: 1997-08-11
-
Publication No.: US5875136APublication Date: 1999-02-23
- Inventor: Min-Chih Hsuan , Jerry Jaw , Charlie Han
- Applicant: Min-Chih Hsuan , Jerry Jaw , Charlie Han
- Applicant Address: TWX
- Assignee: United Microelectronics Corporation
- Current Assignee: United Microelectronics Corporation
- Current Assignee Address: TWX
- Priority: TWX86109361 19970703
- Main IPC: G11C5/06
- IPC: G11C5/06
Abstract:
A repairable memory module, such as a DRAM (dynamic random access memory) or a flash memory module, and a method of repairing memory modules are proposed. Based on the repairable memory module, any failed memory ICs in the module that are found before shipment or after use can be repaired through the use of a backup memory IC. Fundamentally, when any failed memory ICs are found in the module, a set of zero-ohm resistors are used to short-circuit a number of selected pairs of jumping pads to thereby redirect the connections to the I/O (input/output) and column-address strobe pins on the failed memory IC instead to the same nominal pins on the backup memory IC. This allows the function of the failed ICs to be instead performed by the backup memory chip.
Public/Granted literature
- US5209264A Check valve Public/Granted day:1993-05-11
Information query