Abstract:
A handheld puzzle is described. The puzzle reduces friction between moveable pieces and at the same time allows for restrained alignment of the moveable pieces. An inner core of the puzzle can be adapted for use with a plurality of outer moveable face pieces that can comprise a variety of surface geometries.
Abstract:
A method of fabricating a direct contact through hole type wafer. Devices and contact plugs are formed in one side of a silicon-on-insulator substrate, and multilevel interconnects are formed over the side of the silicon-on-insulator substrate. The multilevel interconnects are coupled with the devices and the contact plugs. Bonding pads, which couples with the multilevel interconnects, are formed over the multilevel interconnects. An opening is formed on the other side of the silicon-on-insulator substrate to expose the contact plugs. An insulation layer, a barrier layer and a metal layer are formed in sequence in the opening. Bumps are formed on the bonding pads and the metal layer, respectively.
Abstract:
A pad design. The pad design provides an additional testing pad that is electrically connected to a conventional bonding pad and positioned beside the bonding pad. The conventional bonding pad is formed on a provided chip, and a bump is formed on the bonding pad. A final test is performed on the testing pad so that damage formed on the bump or on the bonding pad can be prevented.
Abstract:
A preburn-in DRAM module circuit board is provided, which allows a plurality of DRAM modules to be constructed directly thereon, and which can be directly connected to a large burn-in oven so as to perform a burn-in process concurrently on the DRAM modules mounted thereon to check for any defected IC chips that are to be reworked. After the burn-in process, each of the DRAM modules can be cut apart from the circuit board to serve as a single memory module. The preburn-in DRAM module circuit board allows the manufacturing process for the DRAM modules to be reduced in schedule and manufacturing cost. Material cost can also be saved since the burn-in circuit and the module circuit are arranged on the same circuit board.
Abstract:
A wafer level IC structure and a method of manufacturing this wafer level IC structure are proposed, which can help increase the yield of the IC manufacture. The wafer level IC structure is constructed on a semiconductor wafer which is defined into a plurality of discrete IC blocks on the wafer, each IC block being used to form a plurality of IC components such as memory cells. A multi-layer interconnect structure is formed to electrically interconnect these IC components in each of the IC blocks. A first testing and repair process is then perform to disconnect any inoperative IC components from active use. This completes the fabrication stage of the manufacture process. In the subsequent packaging stage, a redistribution line structure is formed to interconnect the discrete IC blocks into an integral functional unit. A second testing and repair process is then perform to disconnect any inoperative IC blocks from active use. The overall IC manufacture would have an increased yield as compared to the prior art.
Abstract:
A repairable memory module, such as a DRAM (dynamic random access memory) or a flash memory module, and a method of repairing memory modules are proposed. Based on the repairable memory module, any failed memory ICs in the module that are found before shipment or after use can be repaired through the use of a backup memory IC. Fundamentally, when any failed memory ICs are found in the module, a set of zero-ohm resistors are used to short-circuit a number of selected pairs of jumping pads to thereby redirect the connections to the I/O (input/output) and column-address strobe pins on the failed memory IC instead to the same nominal pins on the backup memory IC. This allows the function of the failed ICs to be instead performed by the backup memory chip.
Abstract:
A dual-dies packaging structure is provided. The dual-dies packaging structure includes a lead frame, which further includes a die pad and several lead legs, in which the die pad includes an upper surface and a lower surface. A first die, having several first bonding pads, is fixed on the upper surface of the die pad by, for example, gluing it. The first bonding pads remain exposed. A second die, having several second bonding pads, is fixed on the lower surface by, for example, gluing it. The second bonding pads remain exposed. A bumping redistribution structure layer is located on the second die so as to redistribute each of the second bonding pads to a pseudo-bonding pad. Each pseudo-bonding pad has its proper location with respect to the first bonding pads. Thus, when several bonding wires are used to bond the first bonding pads and the pseudo-bonding pads to the lead legs, bonding wires can be regularly and simply put on without crossing or entangling to each other.
Abstract:
A method of fabricating a direct contact through hole type wafer. Devices and contact plugs are formed in one side of a silicon-on-insulator substrate, and multilevel interconnects are formed over the side of the silicon-on-insulator substrate. The multilevel interconnects are coupled with the devices and the contact plugs. Bonding pads, which couples with the multilevel interconnects, are formed over the multilevel interconnects. An opening is formed on the other side of the silicon-on-insulator substrate to expose the contact plugs. An insulation layer, a barrier layer and a metal layer are formed in sequence in the opening. Bumps are formed on the bonding pads and the metal layer, respectively.
Abstract:
A dual-dies packaging structure is provided. The dual-dies packaging structure includes a lead frame, which further includes a die pad and several lead legs, in which the die pad includes an upper surface and a lower surface. A first die, having several first bonding pads, is fixed on the upper surface of the die pad by, for example, gluing it. The first bonding pads remain exposed. A second die, having several second bonding pads, is fixed on the lower surface by, for example, gluing it. The second bonding pads remain exposed. A bumping redistribution structure layer is located on the second die so as to redistribute each of the second bonding pads to a pseudo-bonding pad. Each pseudo-bonding pad has its proper location with respect to the first bonding pads. Thus, when several bonding wires are used to bond the first bonding pads and the pseudo-bonding pads to the lead legs, bonding wires can be regularly and simply put on without crossing or entangling to each other.
Abstract:
A method for determining failure rate and selecting a best burn-in time is disclosed. The method comprises the following steps. First of all, integrate circuits are provided. Then a life-time testing process is performed, wherein a failure rate versus testing time relation is established by measuring the life-time of each integrated circuit under a testing environment, wherein an acceleration factor function also is established under the testing environment. Next a simulating process that uses a testing time function is performed to simulate the failure rate versus testing time relation. Then a transforming process that uses the acceleration factor function is performed to transform the testing time function into a real time function. Finally, an integrating process is performed to integrate the real time function through a calculating region to acquire an accumulated failure rate real time function.