发明授权
- 专利标题: Apparatus and method for forming film
- 专利标题(中): 薄膜成膜装置及方法
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申请号: US907919申请日: 1997-08-11
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公开(公告)号: US5879741A公开(公告)日: 1999-03-09
- 发明人: Kenji Itoh
- 申请人: Kenji Itoh
- 申请人地址: JPX Kanagawa
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JPX Kanagawa
- 优先权: JPX5-089116 19930324
- 主分类号: C23C14/20
- IPC分类号: C23C14/20 ; C23C14/22 ; C23C14/24 ; C23C14/34 ; C23C14/50 ; C23C16/26 ; C23C16/27 ; C23C16/44 ; C23C16/458 ; C23C16/50 ; C23C16/00 ; C23C14/56
摘要:
When a thin film is formed on a flexible and filmy substrate by a vapor phase method, the substrate is prevented from warping to be caused by the internal stress remaining in the thin film. When the thin film is formed by the vapor phase method, the substrate is previously curved so that the stress acts in the direction canceling the internal stress remaining in the thin film to be formed prior to the filming. Accordingly, the stress of the curved substrate cancels out the stress remaining in the thin film formed on the substrate. The substrate having a thin film formed thereon is not warped, the stress in the interface between the thin film formed and the substrate is removed, and the thin film has no cracks to be caused by the stress.
公开/授权文献
- US5290526A Processes to recover and reconcentrate gold from its ores 公开/授权日:1994-03-01