发明授权
US5879990A Semiconductor device having an embedded non-volatile memory and method
of manufacturing such a semicondutor device
失效
具有嵌入式非易失性存储器的半导体器件和制造这种半导体器件的方法
- 专利标题： Semiconductor device having an embedded non-volatile memory and method of manufacturing such a semicondutor device
- 专利标题（中）： 具有嵌入式非易失性存储器的半导体器件和制造这种半导体器件的方法
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申请号： US814868申请日： 1997-03-11
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公开(公告)号： US5879990A公开(公告)日： 1999-03-09
- 发明人: Guido J. M. Dormans , Robertus D. J. Verhaar , Roger Cuppens
- 申请人： Guido J. M. Dormans , Robertus D. J. Verhaar , Roger Cuppens
- 申请人地址： NY New York
- 专利权人： U.S. Philips Corporation
- 当前专利权人： U.S. Philips Corporation
- 当前专利权人地址： NY New York
- 优先权： EPX96200791.0 19960322
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L21/8247 ; H01L27/10 ; H01L27/105 ; H01L27/115 ; H01L29/423 ; H01L29/43 ; H01L29/788 ; H01L29/792
摘要：
The invention relates in particular, though not exclusively, to an integrated circuit with an embedded non-volatile memory with floating gate (10). According to the invention, at least two poly layers of equal or at least substantially equal thickness are used for this device. The first poly layer, poly A, is for the floating gate (10) and for the gates (22) of NMOS and PMOS in the logic portion of the circuit. The second poly layer, poly B, serves exclusively for the control electrode (21) above the floating gate. If so desired, a third poly layer may be deposited for both the control electrode and the logic gates, so that the thicknesses of these electrodes, and thus their resistances, are given desired values. Problems like overetching and bridging during saliciding are prevented in that the control electrode and the logic gates have the same thickness.
公开/授权文献
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