发明授权
- 专利标题： Chemical vapor deposition chamber
- 专利标题（中）： 化学气相沉积室
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申请号： US939962申请日： 1997-09-29
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公开(公告)号： US5882419A公开(公告)日： 1999-03-16
- 发明人: Ashok Sinha , Mei Chang , Ilya Perlov , Karl Littau , Alan Morrison , Lawrence Chung-Lai Lei
- 申请人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl Littau , Alan Morrison , Lawrence Chung-Lai Lei
- 申请人地址： CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： CA Santa Clara
- 主分类号： C23C16/44
- IPC分类号： C23C16/44 ; C23C16/455 ; C23C16/458 ; C23C16/46 ; H01L21/00 ; H01L21/68 ; H01L21/687 ; C23C16/00
摘要：
An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate is supported on a solid receiving plate, and a positioning assembly aligns the substrate to the receiving plate. In some embodiments, the invention may include a stem interconnected to the substrate, a heat limiting member disposed about the stem, and a shroud extending about the stem.
公开/授权文献
- US4739142A Method of producing a wire bonding ball 公开/授权日：1988-04-19