发明授权
US5883016A Apparatus and method for hydrogenating polysilicon thin film transistors
by plasma immersion ion implantation
失效
通过等离子体浸没离子注入氢化多晶硅薄膜晶体管的装置和方法
- 专利标题： Apparatus and method for hydrogenating polysilicon thin film transistors by plasma immersion ion implantation
- 专利标题（中）： 通过等离子体浸没离子注入氢化多晶硅薄膜晶体管的装置和方法
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申请号： US627417申请日： 1996-04-04
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公开(公告)号： US5883016A公开(公告)日： 1999-03-16
- 发明人: Chung Chan , Shu Qin
- 申请人： Chung Chan , Shu Qin
- 申请人地址： MA Boston
- 专利权人： Northeastern University
- 当前专利权人： Northeastern University
- 当前专利权人地址： MA Boston
- 主分类号： C23C8/36
- IPC分类号： C23C8/36 ; H01L21/30 ; C23C16/48
摘要：
A method for hydrogenating a thin film semiconductor wafer and an apparatus for performing the method. The method comprises the steps of applying a pulsed potential having a predetermined amplitude, a predetermined frequency, and a predetermined pulse duration to the thin film semiconductor wafer while exposing the thin film semiconductor wafer to a hydrogen plasma. The apparatus performs this method through the utilization of an inductively-coupled plasma (ICP) source so as to allow saturation of device parameter improvements within a reduced process time of 5 minutes. The ICP source allows this reduced process time to be achieved in a low energy, high dose rate plasma immersion ion implantation (PIII) hydrogenation process according to the present invention.
公开/授权文献
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