发明授权
- 专利标题： Semiconductor memory device with increased coupling ratio
- 专利标题（中）： 具有增加耦合比的半导体存储器件
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申请号： US789529申请日： 1997-01-27
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公开(公告)号： US5886379A公开(公告)日： 1999-03-23
- 发明人: Hee-Cheol Jeong
- 申请人： Hee-Cheol Jeong
- 申请人地址： KRX Chungcheongbuk-do
- 专利权人： LG Semicon Co., Ltd.
- 当前专利权人： LG Semicon Co., Ltd.
- 当前专利权人地址： KRX Chungcheongbuk-do
- 优先权： KRX1996-16464 19960516
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; H01L21/336 ; H01L21/8247 ; H01L27/115 ; H01L29/423 ; H01L29/788 ; H01L29/792 ; H01L29/76
摘要：
A semiconductor memory device and a method for manufacturing a semiconductor memory device for increasing the coupling ratio are disclosed. In the memory device, a tunneling insulating film is formed on a semiconductor substrate. A floating gate is formed on the tunneling insulating film. A dielectric layer is formed on the surface of the floating gate. A control gate having a predetermined shape is formed on the dielectric layer. The capacitance between the control gate and the floating gate is increased, enlarging the coupling ratio. As a result, the power consumption can be reduced and the access time can be decreased.
公开/授权文献
- US5263087A Time constant processing circuit for surround processor 公开/授权日：1993-11-16
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