发明授权
- 专利标题： Method for making a ferroelectric semiconductor device and a layered structure
- 专利标题（中）： 制造铁电半导体器件和分层结构的方法
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申请号： US956622申请日： 1997-09-29
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公开(公告)号： US5888296A公开(公告)日： 1999-03-30
- 发明人: William J. Ooms , Daniel S. Marshall , Jerald A. Hallmark
- 申请人： William J. Ooms , Daniel S. Marshall , Jerald A. Hallmark
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/285 ; H01L21/314 ; H01L21/316 ; H01L29/51 ; C30B23/00
摘要：
A layered bismuth ferroelectric structure (12) and a method for forming the bismuth layered ferroelectric structure (12). A monolayer (12A) of bismuth is formed in intimate contact with a single crystalline semiconductor material (11). A layered ferroelectric material (12) is grown on the monolayer (12A) of bismuth such that the monolayer (12A) of bismuth becomes a part of the layered ferroelectric material (12). The ferroelectric material (12) forms a layered ferroelectric material which is not a pure perovskite, wherein the crystalline structure at the interface between the single crystalline semiconductor material (11) and the monolayer (12A) of bismuth are substantially the same.
公开/授权文献
- US5383460A Method and apparatus for ultrasound imaging and atherectomy 公开/授权日：1995-01-24
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