- 专利标题: Mask substrate, projection exposure apparatus equipped with the mask substrate, and a pattern formation method utilizing the projection exposure apparatus
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申请号: US734544申请日: 1996-10-21
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公开(公告)号: US5894056A公开(公告)日: 1999-04-13
- 发明人: Yukio Kakizaki , Toru Kiuchi , Kesayoshi Amano , Toshikazu Umatate
- 申请人: Yukio Kakizaki , Toru Kiuchi , Kesayoshi Amano , Toshikazu Umatate
- 申请人地址: JPX Tokyo
- 专利权人: Nikon Corporation
- 当前专利权人: Nikon Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX7-330542 19951219
- 主分类号: G03F1/44
- IPC分类号: G03F1/44 ; G03F1/50 ; G03F7/20 ; G03F9/00 ; H01L21/027 ; G06F9/00 ; G03B27/42 ; G01B11/00
摘要:
In order to reduce mask pattern transfer error caused by expansion of the mask substrate during transferring the circuit pattern onto the photosensitive substrate, a mask substrate is loosely supported on a plurality of mounts on the mask stage so that the mask substrate can freely expand in response to changes in its temperature. A measuring instrument (such as a temperature sensor or an interferometer) is used to measure a value representing the expansion amount of the mask substrate. Alignment and positioning of the mask substrate and the photosensitive substrate is adjusted in response to the expansion amount of the reticle, based on the measured value.
公开/授权文献
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