发明授权
- 专利标题： Semiconductor device using semiconductor BCN compounds
- 专利标题（中）： 半导体器件采用半导体BCN化合物
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申请号： US798102申请日： 1997-02-12
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公开(公告)号： US5895938A公开(公告)日： 1999-04-20
- 发明人: Miyoko Watanabe , Koichi Mizushima , Satoshi Itoh , Masao Mashita
- 申请人： Miyoko Watanabe , Koichi Mizushima , Satoshi Itoh , Masao Mashita
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX8-029353 19960216; JPX9-020470 19970203
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; C23C16/36 ; H01L21/331 ; H01L21/338 ; H01L29/12 ; H01L29/26 ; H01L29/737 ; H01L29/778 ; H01L29/78 ; H01L29/812 ; H01L31/0224 ; H01L31/032 ; H01L31/04 ; H01L31/068 ; H01L31/07 ; H01L31/108 ; H01L33/06 ; H01L33/10 ; H01L33/26 ; H01L33/40 ; H01L33/62 ; H01S5/00 ; H01S5/32 ; H01L31/0312
摘要：
Disclosed is a semiconductor device comprising a semiconductor BCN compound layer and a metallic BCN compound layer and/or an insulating BCN compound layer, wherein the semiconductor BCN compound layer and the metallic BCN compound layer and/or insulating BCN compound layer are stacked one upon the other.
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