发明授权
US5896342A Semiconductor memory device having collective writing mode for writing
data on row basis
失效
具有用于以行为基础写入数据的集体写入模式的半导体存储器件
- 专利标题： Semiconductor memory device having collective writing mode for writing data on row basis
- 专利标题（中）： 具有用于以行为基础写入数据的集体写入模式的半导体存储器件
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申请号： US907778申请日： 1997-08-11
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公开(公告)号： US5896342A公开(公告)日： 1999-04-20
- 发明人: Hiroyuki Nakao
- 申请人： Hiroyuki Nakao
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX9-033640 19970218
- 主分类号： G11C11/401
- IPC分类号： G11C11/401 ; G11C7/10 ; G11C29/14 ; G11C8/00
摘要：
In a DRAM column decoder, an OR gate receiving a test signal and an output of a column decoder unit circuit is provided corresponding to each column select line. When test signal is at the active "H" level, all column select lines attain the "H" level and all column select gates are rendered conductive, allowing collective writing row by row. A separate circuit for collective writing is not required, so that the layout area is reduced.
公开/授权文献
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