- 专利标题： Semiconductor device and method of manufacturing the same
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申请号： US714405申请日： 1996-09-16
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公开(公告)号： US5899739A公开(公告)日： 1999-05-04
- 发明人: Tohru Ozaki
- 申请人： Tohru Ozaki
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX7-238847 19950918
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/768 ; H01L21/822 ; H01L21/8242 ; H01L27/108 ; H01L21/44
摘要：
A method of manufacturing a semiconductor device. First, a plurality of wires are arranged in parallel to one another, on a semiconductor substrate. Then, insulating films of a first group are formed on tops of the wires, respectively. Next, second insulating films of a second group are formed on sides of the wires, respectively. Further, among the wires there are formed insulating films of a third group which have upper surfaces located at a level not higher than upper surfaces of the insulating films of the second group. Thereafter, contact holes are formed by subjecting the insulating films of the third group to selectively etching. Finally, the contact holes are filled with electrically conductive material.