发明授权
- 专利标题： Field effect semiconductor device having a reduced leakage current
- 专利标题（中）： 场效应半导体器件具有减小的漏电流
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申请号： US998894申请日： 1997-12-29
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公开(公告)号： US5900641A公开(公告)日： 1999-05-04
- 发明人: Naoki Hara , Shuichi Tanaka , Masahiko Takikawa
- 申请人： Naoki Hara , Shuichi Tanaka , Masahiko Takikawa
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX9-205051 19970730
- 主分类号： H01L21/338
- IPC分类号： H01L21/338 ; H01L29/778 ; H01L29/812 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109
摘要：
A field-effect transistor including a channel layer, a source electrode, a drain electrode, a high-resistance layer provided on the channel layer between the source electrode and the drain electrode and a gate electrode provided in an opening formed in the high-resistance layer, wherein the high-resistance layer is defined by a first side-wall facing the source electrode and a second side-wall facing the drain electrode, such that the first side-wall is separated from the source electrode.
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