发明授权
- 专利标题： Field-effect transistor and method of manufacturing the same
- 专利标题（中）： 场效应晶体管及其制造方法
-
申请号： US81054申请日： 1998-05-19
-
公开(公告)号： US5905277A公开(公告)日： 1999-05-18
- 发明人: Yorito Ota , Hiroyuki Masato , Shigeru Morimoto , Junko Iwanaga
- 申请人： Yorito Ota , Hiroyuki Masato , Shigeru Morimoto , Junko Iwanaga
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX9-129157 19970520
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/335 ; H01L21/338 ; H01L29/10 ; H01L29/812 ; H01L21/328 ; H01L21/336 ; H01L21/72 ; H01L31/109
摘要：
A channel layer made of n-type GaAs doped with Si, a hole absorption layer made of InGaAs having a valance band higher in energy level than that of GaAs, and an undoped layer made of GaAs are formed sequentially on a semi-insulating substrate made of GaAs. A gate recess region having a pair of sidewall portions each consisting of an upper sidewall composed of the undoped layer and a lower sidewall composed of the hole absorption layer is formed on the channel region. The channel region is exposed in the gate recess region. An indent having an undercut configuration is formed in the lower sidewall of the gate recess region. A gate electrode is formed to extend over a stepped portion composed of the sidewall portion of the gate recess region closer to a drain electrode.
公开/授权文献
- USD402052S Window frame component 公开/授权日：1998-12-01
信息查询
IPC分类:
