发明授权
US5905303A Method for manufacturing bump leaded film carrier type semiconductor
device
失效
凸起引线薄膜载体型半导体器件的制造方法
- 专利标题： Method for manufacturing bump leaded film carrier type semiconductor device
- 专利标题（中）： 凸起引线薄膜载体型半导体器件的制造方法
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申请号： US873593申请日： 1997-06-12
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公开(公告)号： US5905303A公开(公告)日： 1999-05-18
- 发明人: Keiichiro Kata , Shuichi Matsuda , Eiji Hagimoto
- 申请人： Keiichiro Kata , Shuichi Matsuda , Eiji Hagimoto
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX8-110857 19940525
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L23/12 ; H01L23/31 ; H01L23/498 ; H01L23/48
摘要：
An insulating film has conductive layers on a first surface and conductive protrusions on a second surface. The conductive layers are connected to the conductive protrusions via through holes provided in the insulating film. A semiconductor chip having pads is adhered by an adhesive layer to the insulating film. Then, the conductive layers are locally pressured, so that the conductive layers are electrically connected to respective ones of the pads.
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