- 专利标题： Method of manufacturing a surrounding gate type MOSFET
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申请号： US901936申请日： 1997-07-29
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公开(公告)号： US5918115A公开(公告)日： 1999-06-29
- 发明人: Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
- 申请人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-92304 19910423; JPX3-92305 19910423; JPX3-97243 19910426; JPX3-184168 19910628; JPX3-184169 19910628; JPX3-184170 19910628; JPX3-184171 19910628
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L21/332
摘要：
A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.
公开/授权文献
- US5237985A Uterine retractor 公开/授权日：1993-08-24
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