发明授权
- 专利标题： High density plasma enhanced chemical vapor deposition process in combination with chemical mechanical polishing process for preparation and planarization of intemetal dielectric layers
- 专利标题（中）： 高密度等离子体增强化学气相沉积工艺结合化学机械抛光工艺制备和平坦化介质层
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申请号： US45101申请日： 1998-03-19
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公开(公告)号： US5920792A公开(公告)日： 1999-07-06
- 发明人: Chi-Fa Lin
- 申请人： Chi-Fa Lin
- 申请人地址： TWX Hsinchu
- 专利权人： Winbond Electronics Corp
- 当前专利权人： Winbond Electronics Corp
- 当前专利权人地址： TWX Hsinchu
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/316 ; H01L21/00
摘要：
A wafer planarization process which utilizes combined high density plasma chemical vapor deposition (HDP-CVD) process and chemical mechanical polishing (CMP) process is disclosed. This process includes the steps of (a) forming a first HDP-CVD layer on the surface of a semiconductor wafer using a first HDP-CVD composition having a higher etching/depositing component ratio and thus a lower CMP removal rate; (b) forming a second HDP-CVD layer on the first HDP-CVD layer using the same HDP-CVD process but with a second HDP-CVD composition having a lower etching/depositing component ratio and thus a higher CMP removal rate; and (c) using a chemical mechanical process to remove at least a part of the second HDP-CVD layer using the first HDP-CVD layer as a stopper. A protective layer with the same etching/deposition components but a different ratio than the sacrificial layer can be deposited on the sacrificial layer to minimize the dishing effect during the initial stage of the chemical mechanical polishing process.
公开/授权文献
- USD392401S Taillamp for a bicycle 公开/授权日：1998-03-17
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