发明授权
- 专利标题： Method for producing semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US525219申请日： 1995-09-08
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公开(公告)号： US5923968A公开(公告)日： 1999-07-13
- 发明人: Shunpei Yamazaki , Naoto Kusumoto , Satoshi Teramoto
- 申请人： Shunpei Yamazaki , Naoto Kusumoto , Satoshi Teramoto
- 申请人地址： JPX Kanagawa
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX6-248790 19940915; JPX7-132900 19950506
- 主分类号： G02F1/1362
- IPC分类号： G02F1/1362 ; H01L21/02 ; H01L21/20 ; H01L21/322 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L29/786 ; H01L21/00
摘要：
In a producing a thin film transistor, a solution containing a metal element for promoting crystallization of silicon is added in contact with an amorphous silicon film, and then a silicide layer is formed by heating process. Further, after a region as crystal growth nucleus-is formed by patterning the silicide layer, laser light is irradiated during heating process. As a result, crystal-growth is performed from the region as crystal growth nucleus in the amorphous silicon film, thereby to form monodomain regions corresponding to a single crystal. Also, before the solution is added, the amorphous silicon film may be subjected to plasma treatment 30.
公开/授权文献
- US5057337A Method and apparatus for solder coating of leads 公开/授权日：1991-10-15
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