发明授权
US5926737A Use of TiCl.sub.4 etchback process during integrated CVD-Ti/TiN wafer
processing
失效
在集成CVD-Ti / TiN晶片加工过程中使用TiCl4回蚀工艺
- 专利标题： Use of TiCl.sub.4 etchback process during integrated CVD-Ti/TiN wafer processing
- 专利标题（中）： 在集成CVD-Ti / TiN晶片加工过程中使用TiCl4回蚀工艺
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申请号： US914673申请日： 1997-08-19
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公开(公告)号： US5926737A公开(公告)日： 1999-07-20
- 发明人: Michael S. Ameen , Gert Leusink , Joseph T. Hillman
- 申请人： Michael S. Ameen , Gert Leusink , Joseph T. Hillman
- 申请人地址： JPX Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JPX Tokyo
- 主分类号： C23C16/14
- IPC分类号： C23C16/14 ; H01L21/285 ; H01L21/3213 ; H01L21/768 ; H01L21/4763
摘要：
A method of using titanium chloride to etchback CVD-Ti on a patterned oxide wafer and the product formed by this process. Titanium is deposited onto a wafer composed of a silicon base and a pattern oxide layer which exposes portions of the silicon. The titanium is deposited onto the wafer by CVD-Ti. The titanium is deposited as metallic Ti on the oxide layer and reacts with the silicon substrate to form titanium silicide. The wafer is then exposed to a flow of titanium tetrachloride (TiCl.sub.4) gas. The TiCl.sub.4 etches away the metallic Ti on the oxide layer and does not substantially etch the titanium silicide. Optionally titanium nitride and tungsten may then be deposited on the substrate.
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