公开(公告)号：US5926737A

公开(公告)日：1999-07-20

申请号：US914673

申请日：1997-08-19

申请人： Michael S. Ameen ,  Gert Leusink ,  Joseph T. Hillman

发明人： Michael S. Ameen ,  Gert Leusink ,  Joseph T. Hillman

IPC分类号： C23C16/14 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/32136 ,  C23C16/14 ,  H01L21/28518 ,  H01L21/76843

摘要： A method of using titanium chloride to etchback CVD-Ti on a patterned oxide wafer and the product formed by this process. Titanium is deposited onto a wafer composed of a silicon base and a pattern oxide layer which exposes portions of the silicon. The titanium is deposited onto the wafer by CVD-Ti. The titanium is deposited as metallic Ti on the oxide layer and reacts with the silicon substrate to form titanium silicide. The wafer is then exposed to a flow of titanium tetrachloride (TiCl.sub.4) gas. The TiCl.sub.4 etches away the metallic Ti on the oxide layer and does not substantially etch the titanium silicide. Optionally titanium nitride and tungsten may then be deposited on the substrate.

摘要翻译： 使用氯化钛在图案化氧化物晶片上回蚀刻CVD-Ti的方法以及通过该工艺形成的产品。 将钛沉积在由硅基底和暴露部分硅的图案氧化物层组成的晶片上。 通过CVD-Ti将钛沉积在晶片上。 钛作为金属Ti沉积在氧化物层上并与硅衬底反应形成硅化钛。 然后将晶片暴露于四氯化钛（TiCl 4）气体流中。 TiCl 4在氧化物层上蚀刻金属Ti，并且基本上不蚀刻钛硅化物。 然后可以将氮化钛和钨沉积在衬底上。

公开(公告)号：US5834371A

公开(公告)日：1998-11-10

申请号：US791954

申请日：1997-01-31

申请人： Michael S. Ameen ,  Joseph T. Hillman

发明人： Michael S. Ameen ,  Joseph T. Hillman

IPC分类号： C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01L21/28 ,  H01L21/285 ,  H01L21/304 ,  H01L21/768 ,  H05K3/14 ,  C23C16/06

CPC分类号： C23C16/45512 ,  C23C16/0227 ,  C23C16/4405 ,  C23C16/5096 ,  H01L21/76843 ,  H01L21/76877 ,  Y10S156/916

摘要： A CVD apparatus is equipped with a cleaning gas source, selectively connectable to a gas inlet of the chamber of the apparatus, structure, to supply a gas mixture of hydrogen and argon in which the hydrogen content is between 20 percent and 80 percent by volume. A selectively operable 450 MHz MF energy source is coupled to the chamber to energize a plasma in gas. A selectively operable 13.56 MHz HF energy source, controllable independently of the MF energy source and connected between the wafer support and a chamber anode biases a wafer on the support to less than 100 volts, preferably 15 to 35 volts, negative. A heater heats the wafer to temperature about 550.degree. C. Preferably, a turbo molecular pump is used to pump the cleaning gas while maintaining a pressure of between 1 mTorr and 10 Torr and at a rate of from 3 to 12 sccm.

摘要翻译： CVD装置配备有清洁气体源，其可选择性地连接到装置的室的气体入口结构，以供应氢和氩的气体混合物，其中氢含量在20体积％至80体积％之间。 选择性操作的450MHz MF能量源耦合到腔室，以激励气体中的等离子体。 可选择操作的13.56MHz HF能量源，可独立于MF能量源并连接在晶片支撑件和腔室阳极之间，将载体上的晶片偏压至小于100伏，优选为15至35伏负极。 加热器将晶片加热至约550℃。优选地，涡轮分子泵用于泵送清洁气体，同时保持1mTorr至10Torr之间的压力并且以3至12sccm的速率。

公开(公告)号：US06274496B1

公开(公告)日：2001-08-14

申请号：US09553833

申请日：2000-04-21

申请人： Gerrit J. Leusink ,  Michael G. Ward ,  Michael S. Ameen ,  Joseph T. Hillman

发明人： Gerrit J. Leusink ,  Michael G. Ward ,  Michael S. Ameen ,  Joseph T. Hillman

IPC分类号： H01L214763

CPC分类号： H01L21/76856 ,  C23C16/0218 ,  C23C16/14 ,  C23C16/34 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843

摘要： A single chamber method for depositing a stack including titanium and titanium nitride on a wafer surface. Titanium is deposited by plasma enhanced chemical vapor deposition and then plasma nitrided. Titanium nitride is subsequently deposited by a thermal chemical vapor deposition process. Advantageously, the temperatures of the substrate and showerhead as well as the internal chamber pressure are maintained at substantially constant values throughout deposition of the stack.

摘要翻译： 一种用于在晶片表面上沉积包括钛和氮化钛的叠层的单室法。 钛通过等离子体增强化学气相沉积然后等离子体氮化沉积。 随后通过热化学气相沉积工艺沉积氮化钛。 有利的是，在堆叠的沉积过程中，衬底和喷头的温度以及内部室压力保持在基本恒定的值。

公开(公告)号：US5972790A

公开(公告)日：1999-10-26

申请号：US489040

申请日：1995-06-09

申请人： Chantal Arena ,  Robert F. Foster ,  Joseph T. Hillman ,  Michael S. Ameen ,  Jacques Faguet

发明人： Chantal Arena ,  Robert F. Foster ,  Joseph T. Hillman ,  Michael S. Ameen ,  Jacques Faguet

IPC分类号： H01L29/78 ,  C23C16/42 ,  C23C16/50 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/4763

CPC分类号： H01L29/665 ,  H01L21/28052 ,  H01L21/28518

摘要： Titanium is deposited onto a semiconductor interconnect to form a salicide structure by plasma-enhanced chemical vapor deposition. The reactant gases, including titanium tetrachloride, hydrogen and optionally argon, are combined. A plasma is created using RF energy and the plasma contacts the rotating semiconductor material. This causes titanium to be deposited which reacts with exposed silicon to form titanium silicide without any subsequent anneal. Other titanium deposited on the surface, as well as titanium-rich silicon compositions (TiSi.sub.X wherein X is

摘要翻译： 通过等离子体增强化学气相沉积将钛沉积在半导体互连件上以形成硅化物结构。 包括四氯化钛，氢气和任选的氩气的反应气体组合。 使用RF能量产生等离子体，并且等离子体接触旋转的半导体材料。 这导致沉积钛，其与暴露的硅反应形成硅化钛，而没有任何随后的退火。 通过化学蚀刻除去沉积在表面上的其他钛，以及富含钛的硅组合物（TiSiX，其中X为<2）。 如果只沉积约40纳米的钛，则它将选择性地沉积到硅结构上而不涂覆互连的氧化物间隔物。 在该实施例中，消除了对基板进行化学蚀刻的需要。

公开(公告)号：US6161500A

公开(公告)日：2000-12-19

申请号：US940779

申请日：1997-09-30

申请人： Stanislaw Kopacz ,  Douglas Arthur Webb ,  Gerrit Jan Leusink ,  Rene Emile LeBlanc ,  Michael S. Ameen ,  Joseph Todd Hillman ,  Robert F. Foster ,  Robert Clark Rowan, Jr.

发明人： Stanislaw Kopacz ,  Douglas Arthur Webb ,  Gerrit Jan Leusink ,  Rene Emile LeBlanc ,  Michael S. Ameen ,  Joseph Todd Hillman ,  Robert F. Foster ,  Robert Clark Rowan, Jr.

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/01

CPC分类号： C23C16/45574 ,  C23C16/45514 ,  C23C16/45565 ,  C23C16/5096

摘要： A method and apparatus for depositing a film by chemical vapor deposition comprises a showerhead for dispersing reactant gases into the processing space wherein the showerhead has a first space therein operable for receiving and dispersing the first reacting gas, and has a second space therein, generally isolated from the first space, and operable for receiving and dispersing the second reactant gas separate from the first gas dispersion for maintaining segregation of reactant gases and generally preventing premature mixture of the gases prior to their introduction into the processing space to prevent premature deposition in the system.

公开(公告)号：US5989652A

公开(公告)日：1999-11-23

申请号：US791955

申请日：1997-01-31

申请人： Michael S. Ameen ,  Joseph T. Hillman

发明人： Michael S. Ameen ,  Joseph T. Hillman

IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/34 ,  C23C16/56 ,  H01L21/285 ,  H01L21/768 ,  C23C14/02

CPC分类号： H01L21/76856 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  C23C16/56 ,  H01L21/28512 ,  H01L21/76864

摘要： A titanium/titanium nitride film stack can be formed with reduced amounts of impurity by depositing onto a substrate a film of titanium using plasma-enhanced chemical vapor deposition of titanium tetrachloride and hydrogen. This film is then subjected to a hydrogen/argon plasma which significantly reduces the chlorine content of the titanium film. The titanium film can then be subjected to an ammonia plasma which will form a thin layer of titanium nitride which is then coated with a thick layer of titanium nitride using plasma-enhanced chemical vapor deposition of titanium tetrachloride and ammonia. The hydrogen/argon anneal significantly reduces the chlorine content of the titanium film and thus the chlorine content at the titanium substrate interface, particularly when the substrate contains aluminum. This enhances the overall reliability of the formed product.

摘要翻译： 可以通过使用等离子体增强的四氯化钛和氢化学气相沉积在基底上沉积钛膜而形成具有减少量的杂质的钛/氮化钛膜堆叠。 然后将该膜经受氢/氩等离子体，其显着降低钛膜的氯含量。 然后可以对钛膜进行氨等离子体，其将形成氮化钛薄层，然后用等离子体增强化学气相沉积四氯化钛和氨，用氮化钛层涂覆厚层。 氢/氩退火显着降低了钛膜的氯含量，从而降低了钛基板界面处的氯含量，特别是当基板含有铝时。 这增强了形成产品的整体可靠性。

公开(公告)号：US6093645A

公开(公告)日：2000-07-25

申请号：US965658

申请日：1997-11-06

申请人： Michael S. Ameen ,  Joseph T. Hillman ,  Douglas A. Webb

发明人： Michael S. Ameen ,  Joseph T. Hillman ,  Douglas A. Webb

IPC分类号： H01L21/285 ,  C23C8/02 ,  C23C16/02 ,  C23C16/14 ,  C23C16/34 ,  C23C16/56 ,  C23C28/00 ,  H01L21/28 ,  H01L21/768

CPC分类号： H01L21/76856 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  C23C16/56 ,  C23C28/322 ,  C23C28/34 ,  C23C28/3455 ,  C23C8/02 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/28518

摘要： An effective barrier layer to chemical attack of fluorine during chemical vapor deposition of tungsten from a tungsten fluoride source gas is fabricated by the present invention. A titanium nitride conformal barrier film can be formed by in-situ nitridation of a thin titanium film. The substrate is placed in a module wherein the pressure is reduced and the temperature raised to 350.degree. C. to about 700.degree. C. A titanium film is then deposited by plasma-enhanced chemical vapor deposition of titanium tetrahalide and hydrogen. This is followed by formation of titanium nitride on the titanium film by subjecting the titanium film to an nitrogen containing plasma such as an ammonia, an N.sub.2 or an NH.sub.3 /N.sub.2 based plasma. Tungsten is then deposited on the film of titanium nitride by plasma-enhanced chemical vapor deposition. All the titanium deposition and nitridation steps may be conducted in the same processing module without removing the substrate from the module until the reaction steps are completed. The tungsten deposition step may be preformed in a separate processing module or in the module used to deposit and process the titanium.

摘要翻译： 通过本发明制造在氟化钨源气体的钨的化学气相沉积期间氟的化学侵蚀的有效阻挡层。 可以通过钛钛薄膜的原位氮化形成氮化钛保形膜。 将衬底放置在其中压力降低并且温度升高到350℃至约700℃的模块中。然后通过等离子体增强化学气相沉积四卤化钛和氢气沉积钛膜。 然后，通过使钛膜经受含氮等离子体，例如氨，N 2或NH 3 / N 2等离子体，在钛膜上形成氮化钛。 然后通过等离子体增强化学气相沉积将钨沉积在氮化钛的膜上。 所有的钛沉积和氮化步骤可以在相同的处理模块中进行，而不需要从模块中去除衬底，直到反应步骤完成。 钨沉积步骤可以在单独的处理模块中或在用于沉积和处理钛的模块中预成型。

公开(公告)号：US06635569B1

公开(公告)日：2003-10-21

申请号：US09063196

申请日：1998-04-20

申请人： Michael S. Ameen ,  Joseph T. Hillman ,  Gert Leusink ,  Michael Ward ,  Tugrul Yasar

发明人： Michael S. Ameen ,  Joseph T. Hillman ,  Gert Leusink ,  Michael Ward ,  Tugrul Yasar

IPC分类号： H01L2144

CPC分类号： C23C16/4404 ,  C23C16/14

摘要： A methodology is described by which a processing chamber used to deposit plasma-enhanced Ti-CVD films may be conditioned and passivated efficiently after either a wet cleaning or in-situ chemical cleaning, or after each successive deposition sequence. The technique allows a CVD process, such as, for example, a Ti-PECVD process, to recover film properties, such as resistivity, uniformity, and deposition rate, in a minimum time and following a minimum number of conditioning wafers, thereby improving the productivity of the system. The technique also maintains the stability of the system during continuous operation. This allows for the processing of thousands of wafers between in-situ cleaning of the chamber. Immediately following chamber cleaning and before performing the Ti-CVD process on wafers, the methodology includes forming a plasma with reactive gas to heat reactor components, then adding the coating material containing reactant to deposit the coating material onto the reactor components, then introducing an oxidizing or reducing gas into the chamber to stabilize the coating on the reactor parts, followed by resumption of the wafer coating process. During continuous operation in the Ti-CVD of wafers, the methodology includes introducing a mixture of Ar and H2 gases forming a plasma to heat reactor components where necessary, then introducing and chemically reducing TiCl4 to deposit Ti on the heated reactor components, then introducing oxidizing or reducing gas into the chamber for a period of time necessary to stabilize the Ti film. Preferably, N2 and NH3 are introduced and wafer passivation and reactor stabilization are performed simultaneously. Stabilization of the reactor only, and in some cases also the wafer, may use NH3, H2O, O2 or other gases.

摘要翻译： 描述了一种方法，其中用于沉积等离子体增强的Ti-CVD膜的处理室可以在湿清洗或原位化学清洗之后或在每个连续沉积顺序之后被有效地调节和钝化。 该技术允许诸如例如Ti-PECVD工艺的CVD工艺在最短时间内恢复膜性质，例如电阻率，均匀性和沉积速率，并且在最少数量的调节晶片之后，改进 系统的生产力。 该技术还可以在连续运行期间保持系统的稳定性。 这允许在原位清洁室之间处理数千个晶片。 在室清洁之后和在晶片上进行Ti-CVD工艺之前，该方法包括形成具有反应性气体的等离子体以加热反应器组分，然后加入含有反应物的涂料以将涂料沉积到反应器组分上，然后引入氧化 或将气体还原到室中以稳定反应器部件上的涂层，随后恢复晶片涂布工艺。 在晶圆的Ti-CVD的连续操作过程中，该方法包括在需要时将形成等离子体的Ar和H2气体混合到加热反应器组件中，然后引入和化学还原TiCl 4以将Ti沉积在加热的反应器组分上，然后引入氧化 或将气体还原到室中达到稳定Ti膜所需的一段时间。 优选地引入N 2和NH 3，同时进行晶片钝化和反应器稳定化。 只有反应器稳定，在某些情况下也可以使用NH 3，H 2 O，O 2或其它气体。

公开(公告)号：US06368987B1

公开(公告)日：2002-04-09

申请号：US09587916

申请日：2000-06-06

申请人： Stanislaw Kopacz ,  Douglas Arthur Webb ,  Gerrit Jan Leusink ,  Rene Emile LeBlanc ,  Michael S. Ameen ,  Joseph Todd Hillman ,  Robert F. Foster ,  Robert Clark Rowan, Jr.

发明人： Stanislaw Kopacz ,  Douglas Arthur Webb ,  Gerrit Jan Leusink ,  Rene Emile LeBlanc ,  Michael S. Ameen ,  Joseph Todd Hillman ,  Robert F. Foster ,  Robert Clark Rowan, Jr.

IPC分类号： H01L2131

CPC分类号： C23C16/45574 ,  C23C16/45514 ,  C23C16/45565 ,  C23C16/5096

摘要： A method and apparatus for depositing a film by chemical vapor deposition comprises a showerhead for dispersing reactant gases into the processing space wherein the showerhead has a first space therein operable for receiving and dispersing the first reacting gas, and has a second space therein, generally isolated from the first space, and operable for receiving and dispersing the second reactant gas separate from the first gas dispersion for maintaining segregation of reactant gases and generally preventing premature mixture of the gases prior to their introduction into the processing space to prevent premature deposition in the system.

摘要翻译： 用于通过化学气相沉积沉积膜的方法和装置包括用于将反应物气体分散到处理空间中的喷头，其中喷淋头具有可操作的第一空间，用于接收和分散第一反应气体，并且其中具有通常隔离的第二空间 并且可操作以接收和分散与第一气体分散体分离的第二反应物气体，以保持反应气体的分离，并且通常防止气体在其引入处理空间之前过早混合，以防止在系统中过早沉积 。

公开(公告)号：US6143128A

公开(公告)日：2000-11-07

申请号：US85217

申请日：1998-05-27

申请人： Michael S. Ameen ,  Joseph T. Hillman

发明人： Michael S. Ameen ,  Joseph T. Hillman

IPC分类号： C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01L21/28 ,  H01L21/285 ,  H01L21/304 ,  H01L21/768 ,  H05K3/14 ,  C23F1/02

CPC分类号： C23C16/45512 ,  C23C16/0227 ,  C23C16/4405 ,  C23C16/5096 ,  H01L21/76843 ,  H01L21/76877 ,  Y10S156/916

摘要： A contact cleaning apparatus is equipped with a cleaning gas source, selectively connectable to a gas inlet of the chamber of the apparatus, structure, to supply a gas mixture of hydrogen and argon in which the hydrogen content is between 20 percent and 80 percent by volume. A selectively operable 450 MHz MF energy source is coupled to the chamber to energize a plasma in gas. A selectively operable 13.56 MHz HF energy source, controllable independently of the MF energy source and connected between the substrate support and a chamber anode biases a wafer on the support to less than 100 volts, preferably 15 to 35 volts, negative. A heater heats the wafer to temperature about 550.degree. C. Preferably, a turbo molecular pump is used to pump the cleaning gas while maintaining a pressure of between 1 mTorr and 10 Torr and at a rate of from 3 to 12 sccm.

摘要翻译： 接触清洁装置配备有清洁气体源，其可选择性地连接到装置的室的气体入口结构，以供应氢和氩的气体混合物，其中氢含量在20体积％至80体积％之间 。 选择性操作的450MHz MF能量源耦合到腔室，以激励气体中的等离子体。 一个选择性可操作的13.56MHz HF能量源，可独立于MF能量源并连接在衬底支撑件和腔室阳极之间，可将支撑体上的晶片偏压到小于100伏特，优选15至35伏负极。 加热器将晶片加热至约550℃。优选地，涡轮分子泵用于泵送清洁气体，同时保持1mTorr至10Torr之间的压力并且以3至12sccm的速率。