发明授权
- 专利标题： Plasma treatment method and plasma treatment system
- 专利标题（中）： 等离子体处理方法和等离子体处理系统
-
申请号： US921896申请日： 1997-09-02
-
公开(公告)号： US5928528A公开(公告)日： 1999-07-27
- 发明人: Masafumi Kubota , Shigenori Hayashi , Michinari Yamanaka , Kenji Harafuji
- 申请人： Masafumi Kubota , Shigenori Hayashi , Michinari Yamanaka , Kenji Harafuji
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX8-232987 19960903
- 主分类号： C23C14/34
- IPC分类号： C23C14/34 ; C23C16/50 ; C23C16/511 ; C23C16/515 ; C23F4/00 ; H01J37/32 ; H01L21/203 ; H01L21/205 ; H01L21/302 ; H01L21/3065 ; H01L21/311 ; H01L21/3213 ; H05H1/16
摘要：
A reactive gas supplied to a chamber 1 is put into plasma by supplying radio frequency power to the chamber 1 intermittently or while repeating high and low levels alternately and a specimen A in the chamber 1 is treated by the plasma. A positive pulse-like bias voltage synchronized with a period in which the radio frequency power is not supplied or a period in which low-level power is supplied is applied to the specimen A for preventing charging.
公开/授权文献
- US5306474A Apparatus for growing single crystals 公开/授权日：1994-04-26
信息查询
IPC分类:
