Disclosed is a method of forming a pattern on a substrate, comprising a step of forming a light-sensitive layer containing an aromatic compound on a substrate, a step of patternwise exposing the light-sensitive layer with a light having a wavelength range shorter than the maximum wavelength; in the third absorption band from the long-wave side in the absorption spectrum of the aromatic compound and longer than the maximum wavelength in the fourth absorption band from the same, thereby to cause a photochemical reaction in the light-sensitive layer, and a step of developing the exposed light-sensitive layer, optionally after heat-treating the layer, so as to selectively remove the exposed area of the layer or leave the area as it is. The method gives a pattern having a high resolving power and an excellent dry-etching resistance.