发明授权
- 专利标题: Method of manufacturing a semiconductor integrated circuit device using a photomask in which transmitted light beam intensities are controlled
- 专利标题(中): 使用其中控制透射光束强度的光掩模制造半导体集成电路器件的方法
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申请号: US703067申请日: 1996-08-26
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公开(公告)号: US5933724A公开(公告)日: 1999-08-03
- 发明人: Toshihiro Sekiguchi , Yoshitaka Tadaki , Keizo Kawakita , Jun Murata , Katsuo Yuhara , Toshikazu Kumai , Michio Tanaka , Michio Nishimura , Kazuhiko Saitoh , Takatoshi Kakizaki , Takeshi Sakai , Toshiyuki Kaeriyama , Songsu Cho
- 申请人: Toshihiro Sekiguchi , Yoshitaka Tadaki , Keizo Kawakita , Jun Murata , Katsuo Yuhara , Toshikazu Kumai , Michio Tanaka , Michio Nishimura , Kazuhiko Saitoh , Takatoshi Kakizaki , Takeshi Sakai , Toshiyuki Kaeriyama , Songsu Cho
- 申请人地址: JPX Tokyo TX Dallas
- 专利权人: Hitachi, Ltd.,Texas Instruments
- 当前专利权人: Hitachi, Ltd.,Texas Instruments
- 当前专利权人地址: JPX Tokyo TX Dallas
- 优先权: JPX7-218877 19950828
- 主分类号: G03F1/28
- IPC分类号: G03F1/28 ; G03F1/30 ; G03F1/36 ; G03F1/68 ; H01L21/027 ; H01L21/302 ; H01L21/3065 ; H01L21/8242 ; H01L27/108
摘要:
A phase shifting mask is used for manufacturing a semiconductor integrated circuit device including a conductor pattern in which the line width of patterned conductor strips or the space between patterned conductor strips is not constant. For main transparent areas in the mask corresponding to the conductor pattern, auxiliary pattern segments are provided for compensating changes in the phase distribution of transmitted light caused by changes of the line width or the space. Alternately, the spaces between the conductor strips are adjusted to suppress the changes in the phase distribution of transmitted light. Whether the auxiliary pattern segments should have the phase shifting function is determined depending upon the disposition of the main transparent areas.
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