发明授权
- 专利标题： Interconnect structure and method to achieve unlanded vias for low dielectric constant materials
- 专利标题（中）： 互连结构和方法来实现低介电常数材料的非通孔
-
申请号： US829112申请日： 1997-03-31
-
公开(公告)号： US5935868A公开(公告)日： 1999-08-10
- 发明人: Sychyi Fang , Chaunbin Pan , Sing-Mo Tzeng , Chien Chiang
- 申请人： Sychyi Fang , Chaunbin Pan , Sing-Mo Tzeng , Chien Chiang
- 申请人地址： CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/522 ; H01L21/00
摘要：
A method of forming an interconnect structure using a low dielectric constant material as an intralayer dielectric is described. In one embodiment, the present inventive method comprises the following steps. A conductive structure that is surrounded by a low dielectric constant material on its side surfaces is formed. A first inorganic insulator is formed over at least a portion of the low dielectric constant material. A second inorganic insulator is formed over the first inorganic insulator. A photoresist layer is deposited and then patterned to form an unlanded via in the second inorganic insulator. The second inorganic insulator and a portion of the first inorganic insulator are etched in order to form the unlanded via.
公开/授权文献
- US5212627A Electronic module housing and assembly with integral heatsink 公开/授权日：1993-05-18
信息查询
IPC分类:
