公开(公告)号：US5935868A

公开(公告)日：1999-08-10

申请号：US829112

申请日：1997-03-31

申请人： Sychyi Fang ,  Chaunbin Pan ,  Sing-Mo Tzeng ,  Chien Chiang

发明人： Sychyi Fang ,  Chaunbin Pan ,  Sing-Mo Tzeng ,  Chien Chiang

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L21/00

CPC分类号： H01L23/5226 ,  H01L21/76802 ,  H01L21/76805 ,  H01L2924/0002

摘要： A method of forming an interconnect structure using a low dielectric constant material as an intralayer dielectric is described. In one embodiment, the present inventive method comprises the following steps. A conductive structure that is surrounded by a low dielectric constant material on its side surfaces is formed. A first inorganic insulator is formed over at least a portion of the low dielectric constant material. A second inorganic insulator is formed over the first inorganic insulator. A photoresist layer is deposited and then patterned to form an unlanded via in the second inorganic insulator. The second inorganic insulator and a portion of the first inorganic insulator are etched in order to form the unlanded via.

摘要翻译： 描述了使用低介电常数材料作为层间电介质形成互连结构的方法。 在一个实施例中，本发明的方法包括以下步骤。 形成在其侧表面上由低介电常数材料包围的导电结构。 在低介电常数材料的至少一部分上形成第一无机绝缘体。 在第一无机绝缘体上形成第二无机绝缘体。 沉积光致抗蚀剂层，然后将其图案化以在第二无机绝缘体中形成未上覆的通孔。 蚀刻第二无机绝缘体和第一无机绝缘体的一部分以形成未经过的通孔。