发明授权
US5936159A Semiconductor sensor having multi-layer movable beam structure film
失效
具有多层可移动束结构膜的半导体传感器
- 专利标题： Semiconductor sensor having multi-layer movable beam structure film
- 专利标题（中）： 具有多层可移动束结构膜的半导体传感器
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申请号： US755097申请日： 1996-11-25
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公开(公告)号： US5936159A公开(公告)日： 1999-08-10
- 发明人: Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama
- 申请人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama
- 申请人地址： JPX Kariya
- 专利权人： Nippondenso Co., Ltd.
- 当前专利权人： Nippondenso Co., Ltd.
- 当前专利权人地址： JPX Kariya
- 优先权： JPX6-38836 19940309; JPX7-31163 19950220
- 主分类号： G01P15/08
- IPC分类号： G01P15/08 ; G01P15/12 ; H01L21/28 ; H01L29/51 ; H01L29/84
摘要：
A semiconductor sensor including a movable member beam structure having a reduced deflection characteristic. The sensor includes a movable beam structure film suspended from a semiconductor substrate, with a gap interposed between the beam structure film and the substrate. The beam structure film is composed of a plurality of film layers that are laminated in a direction of film thickness. Further, a stress relieving layer is interposed between respective films to reduce overall internal stress on the structure.
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