发明授权
US5939334A System and method of selectively cleaning copper substrate surfaces,
in-situ, to remove copper oxides
失效
选择性地清洗铜基板表面的系统和方法，原位去除铜氧化物
- 专利标题： System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides
- 专利标题（中）： 选择性地清洗铜基板表面的系统和方法，原位去除铜氧化物
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申请号： US861808申请日： 1997-05-22
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公开(公告)号： US5939334A公开(公告)日： 1999-08-17
- 发明人: Tue Nguyen , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
- 申请人： Tue Nguyen , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
- 申请人地址： WA Camas JPX Osaka
- 专利权人： Sharp Laboratories of America, Inc.,Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Laboratories of America, Inc.,Sharp Kabushiki Kaisha
- 当前专利权人地址： WA Camas JPX Osaka
- 主分类号： C23F1/12
- IPC分类号： C23F1/12 ; C23G5/00 ; H01L21/302 ; H01L21/304 ; H01L21/306 ; H01L21/311 ; H01L21/3213 ; H01L21/768
摘要：
A system and method of selectively etching copper surfaces free of copper oxides in preparation for the deposition of an interconnecting metallic material is provided. The method removes metal oxides with .beta.-diketones, such as Hhfac. The Hhfac is delivered into the system in vapor form, and reacts almost exclusively to copper oxides. The by-products of the cleaning process are likewise volatile for removal from the system with a vacuum pressure. Since the process is easily adaptable to most IC process systems, it can be conducted in an oxygen-free environment, without the removal of the IC from the process chamber. The in-situ cleaning process permits a minimum amount of copper oxide to reform before the deposition of the overlying interconnection metal. In this manner, a highly conductive electrical interconnection between the copper surface and the interconnecting metal material is formed. An IC having a metal interconnection, in which the underlying copper layer is cleaned of copper oxides, in-situ with Hhfac vapor, is also provided.
公开/授权文献
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